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Yu. G. Kusrayev

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Published work

10 published item(s)

preprint2020arXiv

Effect of electric current on optical orientation of electrons in AlGaAs/GaAs heterostructure

The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the heavy holes localized at the heterointerface with photoexcited electrons attracted to the heterointerface from the GaAs layer. Two lines with significantly different decay times constitute the H-band: a short-lived high-energy one and a long-lived low-energy one. The high-energy line originates from recombination of electrons freely moving along the structure plane, while the low-energy one is due to recombination of donor-bound electrons near the interface. Application of the lateral electric field of ~ 100-200 V/cm results in a quenching of both lines. This quenching is due to a decrease of electron concentration near the heterointerface as a result of a photocurrent-induced heating of electrons in the GaAs layer. On the contrary, electrons near the heterointerface are effectively cooled, so the donors near the interface are not completely empty up to ~ 100 V/cm, which is in stark contrast with the case of bulk materials. The optical spin polarization of the donor-bound electrons near the heterointerface weakly depends on the electric field. Their polarization kinetics is determined by the spin dephasing in the hyperfine fields of the lattice nuclei. The long spin memory time (> 40 ns) can be associated with suppression of the Bir-Aronov-Pikus mechanism of spin relaxation for electrons.

preprint2020arXiv

Magneto-optics of excitons interacting with magnetic ions in CdSe/CdMnS colloidal nanoplatelets

Excitons in diluted magnetic semiconductors represent excellent probes for studying the magnetic properties of these materials. Various magneto-optical effects, which depend sensitively on the exchange interaction of the excitons with the localized spins of the magnetic ions can be used for probing. Here, we study core/shell CdSe/(Cd,Mn)S colloidal nanoplatelets hosting diluted magnetic semiconductor layers. The inclusion of the magnetic Mn$^{2+}$ ions is evidenced by three magneto-optical techniques using high magnetic fields up to 15 T: polarized photoluminescence, optically detected magnetic resonance, and spin-flip Raman scattering. In particular, information on the Mn$^{2+}$ concentration in the CdS shell layers can be obtained from the spin-lattice relaxation dynamics of the Mn$^{2+}$ spin system.

preprint2016arXiv

Optical orientation of hole magnetic polarons in (Cd,Mn)Te/(Cd,Mn,Mg)Te quantum wells

The optically induced spin polarization in (Cd,Mn)Te/(Cd,Mn,Mg)Te diluted-magnetic-semiconductor quantum wells is investigated by means of picosecond pump-probe Kerr rotation. At 1.8 K temperature, additionally to the oscillatory signals from photoexcited electrons and Manganese spins precessing about an external magnetic field, a surprisingly long-lived (up to 60 ns) nonoscillating spin polarization is detected. This polarization is related to optical orientation of equilibrium magnetic polarons involving resident holes. The suggested mechanism for the optical orientation of the equilibrium magnetic polarons indicates that the detected polaron dynamics originates from unexcited magnetic polarons. The polaron spin dynamics is controlled by the anisotropic spin structure of the heavy-hole resulting in a freezing of the polaron magnetic moment in one of the two stable states oriented along the structure growth axis. Spin relaxation between these states is prohibited by a potential barrier, which depends on temperature and magnetic field. The magnetic polaron relaxation is accelerated with increasing temperature and in magnetic field.

preprint2015arXiv

Förster energy transfer of dark excitons enhanced by a magnetic field in an ensemble of CdTe colloidal nanocrystals

We present a systematic experimental study along with theoretical modeling of the energy transfer in an ensemble of closely-packed CdTe colloidal nanocrystals identified as the Förster resonant energy transfer (FRET). We prove that at low temperature of 4.2 K, mainly the ground dark exciton states in the initially excited small-size (donor) nanocrystals participate in the dipole-dipole FRET leading to additional excitation of the large-size (acceptor) nanocrystals. The FRET becomes possible due to the weak admixture of the bright exciton states to the dark states. The admixture takes place even in zero magnetic field and allows the radiative recombination of the dark excitons. An external magnetic field considerably enhances this admixture, thus increasing the energy transfer rate by a factor of 2-3 in a field of 15T, as well as the radiative rates of the dark excitons in the donor and acceptor nanocrystals. The theoretical modeling allows us to determine the spectral dependence of the probability for the NC to serve as a donor for larger nanocrystals, to evaluate the energy transfer rates as well as to predict their dependencies on the magnetic field, to describe the spectral shift of the photoluminescence maximum due to the energy transfer and to reproduce the experimentally observed spectral dependencies of the photoluminescence recombination dynamics in the magnetic field.

preprint2015arXiv

Long-range p-d exchange interaction in a ferromagnet-semiconductor hybrid structure

Hybrid structures synthesized from different materials have attracted considerable attention because they may allow not only combination of the functionalities of the individual constituents but also mutual control of their properties. To obtain such a control an interaction between the components needs to be established. For coupling the magnetic properties, an exchange interaction has to be implemented which typically depends on wave function overlap and is therefore short-ranged, so that it may be compromised across the interface. Here we study a hybrid structure consisting of a ferromagnetic Co-layer and a semiconducting CdTe quantum well, separated by a thin (Cd,Mg)Te barrier. In contrast to the expected p-d exchange that decreases exponentially with the wave function overlap of quantum well holes and magnetic Co atoms, we find a long-ranged, robust coupling that does not vary with barrier width up to more than 10 nm. We suggest that the resulting spin polarization of the holes is induced by an effective p-d exchange that is mediated by elliptically polarized phonons.

preprint2015arXiv

Optical spin orientation of minority holes in a modulation-doped GaAs/(Ga,Al)As quantum well

The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility 2D electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and polarization of the photoluminescence in a magnetic field are well described in a model whose main elements are resonant absorption of the exciting light by the Landau levels and mixing of the heavy- and light-hole subbands. After subtraction of these effects, the observed influence of magnetic fields on the spin polarization can be well interpreted by a standard approach of the optical orientation method. The spin relaxation of holes is controlled by the Dyakonov-Perel' mechanism. Deceleration of the spin relaxation by the magnetic field occurs through the Ivchenko mechanism - due to the cyclotron motion of holes. Mobility of holes was found to be two orders of magnitude smaller than that of electrons, being determined by the scattering of holes upon the electron gas.

preprint2013arXiv

Exciton spin dynamics of colloidal CdTe nanocrystals in magnetic field

The recombination and spin dynamics of excitons in colloidal CdTe nanocrystals (NCs) are studied by time-resolved photoluminescence in high magnetic fields up to 15 T and at cryogenic temperatures. The recombination decay shows a nonexponential temporal behavior, with the longest component corresponding to the dark excitons having 260 ns decay time at zero magnetic field and 4.2 K temperature. This long component shortens to 150 ns at 15 T due to the magnetic-field-induced mixing of the bright and dark exciton states. The spin dynamics, assessed through the evolution of the magnetic-field-induced circular polarization degree of the photoluminescence, has a fast component shorter than 1 ns related to the bright excitons and a slow component of 5-10 ns associated with the dark excitons. The latter shortens with increasing magnetic field, which is characteristic for a phonon-assisted spin relaxation mechanism. The relatively low saturation level of the associated magnetic-field-induced circular polarization degree of -30 % is explained by a model that suggests the CdTe NCs to constitute an ensemble of prolate and oblate NCs, both having a structural quantization axis. The exciton g-factor of 2.4-2.9 evaluated from fitting the experimental data in the frame of the suggested approach is in good agreement with the expected value for the dark excitons in CdTe NCs.

preprint2010arXiv

Optical orientation of Mn^2+ ions in GaAs

We report on optical orientation of Mn^2+ in bulk GaAs under application of weak longitudinal magnetic field (B <= 100 mT). The manganese spin polarization of 25% is directly evaluated using spin flip Raman scattering spectroscopy. The dynamical polarization of Mn^2+ occurs due to s-d exchange interaction with optically oriented conduction band electrons. Time-resolved photoluminescence uncovers nontrivial electron spin dynamics where the oriented Mn^2+ ions tend to stabilize the electron spin.

preprint2008arXiv

Two-step model versus one-step model of the inter-polarization conversion and statistics of CdSe/ZnSe quantum dot elongations

The magneto-optical inter-polarization conversions by a layer of quantum dots have been investigated. Various types of polarization response of the sample were observed as a function of external magnetic field and of the orientation of the sample. The full set of experimental dependences is analyzed in terms of a one-step and a two-step model of spin evolution. The angular distribution of the quantum dots over the directions of elongation in the plane of the sample is taken into account in terms of the two models, and the model predictions are compared with experimental observations.

preprint2006arXiv

Linear polarization of the photoluminescence of quantum wells

The degree and orientation of the magnetic-field induced linear polarization of the photoluminescence from a wide range of heterostructures containing (Cd,Mn)Te quantum wells between (Cd,Mn,Mg)Te barriers has been studied as a function of detection photon energy, applied magnetic field strength and orientation in the quantum well plane. A theoretical description of this effect in terms of an in-plane deformation acting on the valence band states is presented and is verified by comparison with the experimental data. We attempted to identify clues to the microscopic origin of the valence band spin anisotropy and to the mechanisms which actually determine the linear polarization of the PL in the quantum wells subject to the in-plane magnetic field. The conclusions of the present paper apply in full measure to non-magnetic QWs as well as ensembles of disk-like QDs with shape and/or strain anisotropy.