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Yu-Chang Chen

Yu-Chang Chen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.otherecon.EMcond-mat.mtrl-sci

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Published work

15 published item(s)

preprint2025arXiv

Band Gap Engineering of Nitrogen-Doped Monolayer WSe$_2$ Superlattice and its application to Field Effect Transistor

We systematically investigate the electronic structures of pristine monolayer WSe$_2$ and WSe$_2$ superlattices with periodic nitrogen substitution. Unlike random doping, which often introduces in-gap impurity states, periodic nitrogen doping primarily modulates the band gap, thereby facilitating effective band gap engineering for electronic and optoelectronic applications. The gap narrows monotonically with increasing dopant density (pristine $>$ 8-row $>$ 6-row $>$ 4-row), directly influencing device switching. We also evaluate the FET performance of nanojunctions created by these configurations by examining the contour plot of current density as a function of temperature and gate voltage, which quantifies how bandgap engineering affects switching characteristics. Our calculations clarify the classical-quantum crossover in sub-10 nm 2D FETs: as $T$ rises, $J$ approaches the thermionic current; as $T$ falls, quantum tunneling dominates, and the steep energy dependence of $τ(E)$ may break the classical limit of subthreshold swing imposed by the Boltzmann tyranny. The optimal gating range ($V_g^\mathrm{ON}$, $V_g^\mathrm{OFF}$) is investigated for each temperature, insensitive to temperature in the high-temperature regime, confirming the good thermal stability of the FET devices. A comparison study demonstrates that the 4-row structure, with large $J_\mathrm{OFF}$ and restricted operation range, is inappropriate for realistic FET applications. The pristine structure has a high $V_g^\mathrm{OFF}$ ($\sim$1.1 V) makes it less practical, since such a large threshold voltage may promote time-dependent dielectric breakdown (TDDB) of the oxide layer, reducing device dependability. The 6-row and 8-row structures exhibit more favorable $V_g^\mathrm{OFF}$ values ($\sim$0.75 V), achieving compromise, making them more promising candidates for future FET integration.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

Classical-to-Quantum Crossover in 2D TMD Field-Effect Transistors: A First-Principles Study via Sub-10 nm Channel Scaling Beyond the Boltzmann Tyranny

Scaling field-effect transistors (FETs) into the sub-10-nm regime fundamentally alters the transport mechanism, challenging long-standing design rules. This study investigates monolayer TMD FETs with channel lengths from 12 nm to 3 nm, quantifying the competition between semiclassical thermionic current and quantum tunneling. We show that quantum transport, as described by the Landauer formula, asymptotically approaches classical thermionic emission in the long-channel and high-temperature limit, in accordance with Richardson law. A competition parameter $ζ$ cleanly delineates the semiclassical-to-quantum transition, and two characteristic temperatures emerge: $T_{op}$ (minimizing $J_{OFF}$ and $T_{c}$ (thermionic onset). For $L_{ch}<9$ nm, $T_{op}<300$ K and $J_{OFF}$ is tunneling-dominated; the 3 nm device remains tunneling-dominated up to 500 K and achieves a subthreshold swing overcoming Boltzmann tyranny via the steep slope of $τ(E)$. However, the short-channel effect also generates leakage current and makes the transistor difficult to turn off. For $L_{ch} \geq 9$ nm, $T_{op}>300$ K and $J_{OFF}$ is thermionic-dominated, and the subthreshold swing approaches Boltzmann tyranny scaled by $α_{in}}$. Consequently, the ideal channel length for 2D FETs is $L_{ch} \approx 10$ nm. These results provide criteria for selecting the optimal operating temperature and gate-voltage windows in miniaturizing 2D FETs, and pinpoint the crossover at which quantum tunneling current becomes comparable to semiclassical thermionic emission.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Global Representation of the Conditional LATE Model: A Separability Result

This paper studies the latent index representation of the conditional LATE model, making explicit the role of covariates in treatment selection. We find that if the directions of the monotonicity condition are the same across all values of the conditioning covariate, which is often assumed in the literature, then the treatment choice equation has to satisfy a separability condition between the instrument and the covariate. This global representation result establishes testable restrictions imposed on the way covariates enter the treatment choice equation. We later extend the representation theorem to incorporate multiple ordered levels of treatment.

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preprint2022arXiv

Personalized Subsidy Rules

Subsidies are commonly used to encourage behaviors that can lead to short- or long-term benefits. Typical examples include subsidized job training programs and provisions of preventive health products, in which both behavioral responses and associated gains can exhibit heterogeneity. This study uses the marginal treatment effect (MTE) framework to study personalized assignments of subsidies based on individual characteristics. First, we derive the optimality condition for a welfare-maximizing subsidy rule by showing that the welfare can be represented as a function of the MTE. Next, we show that subsidies generally result in better welfare than directly mandating the encouraged behavior because subsidy rules implicitly target individuals through unobserved heterogeneity in the behavioral response. When there is positive selection, that is, when individuals with higher returns are more likely to select the encouraged behavior, the optimal subsidy rule achieves the first-best welfare, which is the optimal welfare if a policy-maker can observe individuals' private information. We then provide methods to (partially) identify the optimal subsidy rule when the MTE is identified and unidentified. Particularly, positive selection allows for the point identification of the optimal subsidy rule even when the MTE curve is not. As an empirical application, we study the optimal wage subsidy using the experimental data from the Jordan New Opportunities for Women pilot study.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Atomic-scale Field-effect Transistor as a Thermoelectric Power Generator and Self-powered Device

Using first-principles approaches, we have investigated the thermoelectric properties and the energy conversion efficiency of the paired metal-Br-Al junction. Owing to the narrow states in the vicinity of the chemical potential, the nanojunction has large Seebeck coefficients such that it can be considered an efficient thermoelectric power generator. We also consider the nanojunction in a three-terminal geometry, where the current, voltage, power, and efficiency can be efficiently modulated by the gate voltages. Such current-voltage characteristics could be useful in the design of nano-scale electronic devices such, as a transistor or switch. Notably, the nanojunction as a transistor with a fixed finite temperature difference between electrodes can power itself using the Seebeck effect.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Counting Statistics in Nanoscale Junctions

We present first-principles calculations for moments of the current up to the third order in atomic-scale junctions. The quantum correlations of the current are calculated using the current operator in terms of the wave functions obtained self-consistently within the static density-functional theory. We investigate the relationships of the conductance, the second, and the third moment of the current for carbon atom chains of various lengths bridging two metal electrodes in the linear and nonlinear regimes. The conductance, the second-, and the third-order Fano factors exhibit odd-even oscillation with the number of carbon atoms due to the full and half filled π* orbital near the Fermi levels. The third-order Fano factor and the conductance are positively correlated.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Counting Statistics of Parallel Al atomic wires

We have studied how the lateral interaction affects the electric conductance, the second-order current correlation (shot noise), and the third-order one (skewness) of a pair of parallel Al atomic wires. The field operator of wave function is introduced to calculate the current-current correlations. The corresponding wave functions are self-consistently obtained by iteration according to the Lippmann-Schwinger First-principles calculation. The results show that when the distance between two wires is sufficiently small, the bonding interaction near the Fermi level will induce a spatial delocalization of electrons. This leads to an electric conduction value greater than the sum of two uncorrelated atomic wire, and a side-band peak is generated around the maximum conductance. This correlation can also be observed from the shot noise and the skewness. In addition, we found that the three-order Fano factor is negatively related to the conductance.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Current Streamline Flow on Current-induced Effects in Highly Asymmetric Molecular Junctions

From first-principles approaches, we illustrate that the current-induced forces and the selection rule for inelastic effects are highly relevant to the current density in an asymmetric molecular junction. The curved flow of current streamline around the asymmetric molecule may induce a net torque, which tends to rotate the benzene molecule, similar to the way a stream of water rotates a waterwheel. Thus, the Pt/benzene junction offers a practical system in the exploration of the possibility of atomic-scale motors. We also enumerate examples to show that the use of selection rule can lead to misjudgement of the importance of normal modes in the inelastic profiles when the detailed information about the current density is not considered.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Effect of Thermoelectric Cooling in Nanoscale Junctions

We propose a thermoelectric cooling device based on an atomic-sized junction. Using first-principles approaches, we investigate the working conditions and the coefficient of performance (COP) of an atomic-scale electronic refrigerator where the effects of phonon's thermal current and local heating are included. It is observed that the functioning of the thermoelectric nano-refrigerator is restricted to a narrow range of driving voltages. Compared with the bulk thermoelectric system with the overwhelmingly irreversible Joule heating, the 4-Al atomic refrigerator has a higher efficiency than a bulk thermoelectric refrigerator with the same $ZT$ due to suppressed local heating via the quasi-ballistic electron transport and small driving voltages. Quantum nature due to the size minimization offered by atomic-level control of properties facilitates electron cooling beyond the expectation of the conventional thermoelectric device theory.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Seebeck Coefficients in Nanoscale Junctions: Effects of Electron-vibration Scattering and Local Heating

We report first-principles calculations of inelastic Seebeck coefficients in an aluminum monatomic junction. We compare the elastic and inelastic Seebeck coefficients with and without local heating. In the low temperature regime, the signature of normal modes in the profiles of the inelastic Seebeck effects is salient. The inelastic Seebeck effects are enhanced by the normal modes, and further magnified by local heating. In the high temperature regime, the inelastic Seebeck effects are weakly suppressed due to the quasi-ballistic transport.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Efficiency of Energy Conversion in Thermoelectric Nanojunctions

Using first-principles approaches, this study investigated the efficiency of energy conversion in nanojunctions, described by the thermoelectric figure of merit $ZT$. We obtained the qualitative and quantitative descriptions for the dependence of $ZT$ on temperatures and lengths. A characteristic temperature: $T_{0}= \sqrt{β/γ(l)}$ was observed. When $T\ll T_{0}$, $ZT\propto T^{2}$. When $T\gg T_{0}$, $ZT$ tends to a saturation value. The dependence of $ZT$ on the wire length for the metallic atomic chains is opposite to that for the insulating molecules: for aluminum atomic (conducting) wires, the saturation value of $ZT$ increases as the length increases; while for alkanethiol (insulating) chains, the saturation value of $ZT$ decreases as the length increases. $ZT$ can also be enhanced by choosing low-elasticity bridging materials or creating poor thermal contacts in nanojunctions. The results of this study may be of interest to research attempting to increase the efficiency of energy conversion in nano thermoelectric devices.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Effect of electron-phonon scattering on shot noise in nanoscale junctions

We investigate the effect of electron-phonon inelastic scattering on shot noise in nanoscale junctions in the regime of quasi-ballistic transport. We predict that when the local temperature of the junction is larger than its lowest vibrational mode energy $eV_c$, the inelastic contribution to shot noise (conductance) increases (decreases) with bias as $V$ ($\sqrt{V}$). The corresponding Fano factor thus increases as $\sqrt{V}$. We also show that the inelastic contribution to the Fano factor saturates with increasing thermal current exchanged between the junction and the bulk electrodes to a value which, for $V>>V_c$, is independent of bias. A measurement of shot noise may thus provide information about the local temperature and heat dissipation in nanoscale conductors.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Inelastic current-voltage characteristics of atomic and molecular junctions

We report first-principles calculations of the inelastic current-voltage (I-V) characteristics of a gold point contact and a molecular junction in the nonresonant regime. Discontinuities in the I-V curves appear in correspondence to the normal modes of the structures. Due to the quasi-one-dimensional nature of these systems, specific modes with large longitudinal component dominate the inelastic I-V curves. In the case of the gold point contact, our results are in good agreement with recent experimental data. For the molecular junction, we find that the inelastic I-V curves are quite sensitive to the structure of the contact between the molecule and the electrodes thus providing a powerful tool to extract the bonding geometry in molecular wires.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Theory of local heating in nanoscale conductors

We report first-principles calculations of local heating in nanoscale junctions formed by a single molecule and a gold point contact. Due to a larger heat dissipation, the single molecule heats up less than the gold point contact. We also find, at zero temperature, a threshold bias $V_{onset}$ of about 6 mV and 11 mV for the molecule and the point contact, respectively, is required to excite the smallest vibrational mode and generate heat. The latter estimate is in very good agreement with recent experimental results on the same system. At a given external bias $V$ below $V_{onset}$, heating becomes noticeable when the background temperature is on the order of $\sim e(V_{onset}-V)/k_{B}$. Above $V_{onset}$, local heating increases dramatically with increasing bias but is also considerably suppressed by thermal dissipation into the electrodes. The results provide a microscopic picture of current-induced heat generation in atomic-scale structures.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Inelastic effects on the transport properties of alkanethiols

Using first-principles approaches we investigate local heating and the inelastic contribution to the current for various alkanethiols sandwiched between metal electrodes. In the absence of good heat dissipation into the bulk electrodes, we find that the local temperature of the alkanethiols is relatively insensitive to their length. This is due to the rates of heating and cooling processes scaling similarly with length. On the other hand, when considering heat dissipation into the bulk electrodes, the local temperature of alkanethiols decreases as their length increases. We also find that the inelastic scattering profile displays an odd-even effect with length which compares well with experimental results. This effect is due to the alternating direction of the CH3 group motion with respect to current flow with increasing C atoms in the chain, and is very sensitive to the structure of the carbon-sulfur-gold bond. Inelastic scattering profiles can therefore help illuminate the bonding configuration of molecules to metallic surfaces.

0 citations0 reviewsNo code linkedOpen access