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Researcher profile

Yu. A. Danilov

Yu. A. Danilov contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-matcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2019arXiv

Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration and Fermi level position

The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. In all layers, a conductivity type conversion from the initial n-type to the ptype has been found. The ion fluence at which the conversion occurs depends on the Fe concentration in the InSb matrix. Magnetotransport properties of the two-phase (In,Fe)Sb layer are strongly affected by ferromagnetic Fe inclusions. An influence of the number of electrically active radiation defects on the magnetic properties of the single-phase In0.75Fe0.25Sb DMS has been found. At the same time, the results show that the magnetic properties of the In0.75Fe0.25Sb DMS are quite resistant to significant changes of the charge carrier concentration and the Fermi level position. The results confirm a weak interrelation between the ferromagnetism and the charge carrier concentration in (In,Fe)Sb.

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preprint2016arXiv

Optically controlled spin-polarization memory effect on Mn delta-doped heterostrucutres

We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resolved spin-polarized photoluminescence measurements. Using a pre-pulse laser excitation with an opposite circular-polarization clearly reduces the polarization degree of the quantum-well emission for samples where a strong magnetic interaction is observed. The results demonstrate that the Mn ions act as a spin-memory that can be optically controlled by the polarization of the photocreated carriers. On the other hand, the spin-polarized Mn ions also affect the spin-polarization of the subsequently created carriers as observed by their spin relaxation time. These effects fade away with increasing time delays between the pulses as well as with increasing temperatures.

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preprint2013arXiv

Anomalous Hall effect in two-phase semiconductor structures: the crucial role of ferromagnetic inclusions

The Hall effect in InMnAs layers with MnAs inclusions of 20-50 nm in size is studied both theoretically and experimentally. We find that the anomalous Hall effect can be explained by the Lorentz force caused by the magnetic field of ferromagnetic inclusions and by an inhomogeneous distribution of the current density in the layer. The hysteretic dependence of the average magnetization of ferromagnetic inclusions on an external magnetic field results in a hysteretic dependence of RH(Hext). Thus we show the possibility of a hysteretic RH(Hext) dependence (i.e. observation of the anomalous Hall effect) in thin conductive layers with ferromagnetic inclusions in the absence of carriers spin polarization.

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preprint1996arXiv

Possibility of Geometric Description of Quasiparticles in Solids

New phenomenological approach for the description of elementary collective excitations is proposed. The crystal is considered to be an anisotropic space-time vacuum with a prescribed metric tensor in which the information on electromagnetic crystalline fields is included. The quasiparticles in this space are supposed to be described by the equations structurally similar to the relativistic wave equations for particles in empty space. The generalized Klein-Gordon-Fock equation and the generalized Dirac equation in external electromagnetic field are considered. The applicability of the proposed approach to the case of conduction electron in a crystal is discussed.

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