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Researcher profile

Yoshio Bando

Yoshio Bando contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con

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Published work

7 published item(s)

preprint2015arXiv

Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals

Chemical vapor deposition (CVD) of two-dimensional (2D) tungsten dichalcogenide crystals requires steady flow of tungsten source in the vapor phase. This often requires high temperature and low pressure due to the high sublimation point of tungsten oxide precursors. We demonstrate atmospheric pressure CVD of WSe2 and WS2 monolayers at moderate temperatures (700 ~ 850 oC) using alkali metal halides (MX where M= Na or K and X=Cl, Br or I) as the growth promoters. We attribute the facilitated growth to the formation of volatile tungsten oxyhalide species during growth, which leads to efficient delivery of the precursor to the growth substrates. The monolayer crystals were found to be free of unintentional doping with alkali metal and halogen atoms. Good field-effect transistor (FET) performances with high current on/off ratio ~10 7, hole and electron mobilities up to 102 and 26 cm2 V 1 s-1 for WSe2 and electron mobility of ~14 cm2 V-1 s-1 for WS2 devices were achieved.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Noncovalent Functionalization of Boron Nitride Nanotubes in Aqueous Media

Boron nitride nanotubes (BNNTs) are of intense scientific interests due to their unique physiochemical properties and prospective applications in various nanotechnologies. A critical problem hampering the application processing of BNNTs is the outer sidewall functionalization, which is primarily acquired to lead BNNTs dispersible in various solvents. Furthermore, the surface of BNNTs should be intelligently designed and precisely controlled to satisfy the specific demands of different applications. For these purposes, covalent and noncovalent approaches have been factually developed for opening up the key door of applications. Importantly, wrapping the outermost sidewall of BNNTs with either water-soluble polymers or biomolecules through weak noncovalent interactions has been proved to be efficient for giving BNNTs considerable dispersity in aqueous media, and endowing novel chemical functions to the BNNTs with almost no change in their pristine physiochemical properties. This contribution is made to summarize recent progresses, and further addresses the future perspectives on the noncovalent functionalization of BNNTs for promoting their application processing.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

An experimental study of charge distribution in crystalline and amorphous Si nanoclusters in thin silica films

Crystalline and amorphous nanoparticles of silicon in thin silica layers were examined by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS) and x-ray photoelectron spectroscopy (XPS). We used XPS data in the form of the Auger parameter to separate initial and final state contributions to the Si$_{2p}$ energy shift. The electrostatic charging and electron screening issues as well as initial state effects were also addressed. We show that the chemical shift in the nanocrystals is determined by initial state rather than final state effects, and that the electron screening of silicon core holes in nanocrystals dispersed in SiO$_2$ is inferior to that in pure bulk Si.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and Secondary Ion Mass Spectroscopy (SIMS). The nanocrystals were formed after heat treatment at high temperature of a sputtered 10 nm thick silicon rich oxide on 3 nm SiO$_2$ layer made by Rapid Thermal Oxidation (RTO) of silicon. Nanocrystals precipitate when the excess silicon concentration exceeds 50 area %. Below this percentage amorphous silicon nanoclusters were found. In-situ heat treatment of the samples in the TEM showed that the crystallization requires a temperature above 800$^o$C. The nanocrystals precipitate in a 4 nm band, 5 nm from the Si substrate and 4 nm from the SiO$_2$ sample surface. The silicon nucleates where the excess Si concentration is the highest. The top surface has less excess Si due to reaction with oxygen from the ambient during annealing. The SiO$_2$-RTO layer is more Si rich due to Si diffusion from the SiO$_2$-Si layer into RTO. Twinning and stacking faults were found in nanocrystals with 4-10 nm in diameter. These types of defects may have large effects upon the usability of the material in electronic devices. Both single and double twin boundaries have been found in the nanocrystals by high resolution transmission electron microscopy (HRTEM). Image simulations were carried out in order to obtain more information about the defects and nanocrystals. The stacking faults are extrinsic and located in the twin boundaries.

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preprint2012arXiv

Composition and structure of Pd nanoclusters in SiO$_x$ thin film

The nucleation, distribution, composition and structure of Pd nanocrystals in SiO$_2$ multilayers containing Ge, Si, and Pd are studied using High Resolution Transmission Electron Microscopy (HRTEM) and X-ray Photoelectron Spectroscopy (XPS), before and after heat treatment. The Pd nanocrystals in the as deposited sample seem to be capped by a layer of PdO$_x$. A 1-2 eV shift in binding energy was found for the Pd-3d XPS peak, due to initial state Pd to O charge transfer in this layer. The heat treatment results in a decomposition of PdO and Pd into pure Pd nanocrystals and SiO$_2$.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

The formation of Er-oxide nanoclusters in SiO$_2$ thin films with excess Si

The nucleation, distribution and composition of erbium embedded in a SiO$_2$-Si layer were studied with High Resolution Transmission Electron Microscopy (HRTEM), Electron Energy Loss Spectroscopy (EELS), Energy Filtered TEM (EFTEM), Scanning Transmission Electron Microscopy (STEM) and X-ray Photoelectron Spectroscopy (XPS). When the SiO$_2$ layer contains small amounts of Si and Er, nanoclusters of Er-oxide are formed throughout the whole layer. Exposure of the oxide to an electron beam with 1.56*10$^6$ electrons/nm$^2$/sec. causes nanocluster growth. Initially this growth matches the Ostwald ripening model, but eventually it stagnates at a constant nanocluster radius of 2.39 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

History and metastability effects in the intermediate state of mesoscopic type I superconducting Indium

We report detailed magnetic measurements on history and metastability effects in the intermediate state of mesoscopic cylinders of type I superconducting Indium. This includes the observation of topological hysteresis with the signature occurrence of different critical fields during flux entry and flux exit. We show the existence of a plethora of metastable configuration and recipes to access them. We also demonstrate the manifestation of superheating and supercooling of superconducting and normal states, respectively across the superconductivity transition.

0 citations0 reviewsNo code linkedOpen access