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Researcher profile

Yoshiaki Sekine

Yoshiaki Sekine contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con

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Published work

4 published item(s)

preprint2016arXiv

Evaluation of Disorder Introduced by Electrolyte Gating through Transport Measurements in Graphene

We evaluate the degree of disorder in electrolyte gating devices through the transport measurements in graphene. By comparing the mobility in ion- and standard metal-gated devices, we show that the deposition of the ionic liquid introduces charged impurities with a density of approximately $6\times 10^{12}$ cm$^{-2}$; setting the upper limit of the mobility in graphene to 3000 cm$^2$/Vs. At higher temperature, phonons in the ionic liquid further reduce the mobility, making its upper limit 2000 cm$^2$/Vs at room temperature. Since the degree of disorder is independent of the base material, these results are valuable towards understanding disorder effects in general devices using electrolyte gating.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene

The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We show that the transport properties in the quantum Hall regime are heavily affected by the presence of bilayer inclusions, and observe a significant departure from the conventional quantum Hall characteristics. A quantitative model involving enhanced inter-channel scattering mediated by the presence of bilayer inclusions is presented that successfully explains the observed symmetry properties.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Slow noise processes in superconducting resonators

Slow noise processes, with characteristic timescales ~1s, have been studied in planar superconducting resonators. A frequency locked loop is employed to track deviations of the resonator centre frequency with high precision and bandwidth. Comparative measurements are made in varying microwave drive, temperature and between bare resonators and those with an additional dielectric layer. All resonators are found to exhibit flicker frequency noise which increases with decreasing microwave drive. We also show that an increase in temperature results in a saturation of flicker noise in resonators with an additional dielectric layer, while bare resonators stop exhibiting flicker noise instead showing a random frequency walk process.

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preprint2013arXiv

Topological Raman Band in Carbon Nanohorn

Raman spectroscopy has been used in chemistry and physics to investigate the fundamental process involving light and phonons (quantum of lattice vibration). The carbon nanohorn introduces a new subject to Raman spectroscopy, namely topology. We show theoretically that a photo-excited carrier with a non-zero winding number activates a topological $D$ Raman band through the Aharonov-Bohm effect. The topology-induced $D$ Raman band can be distinguished from the ordinary $D$ Raman band for a graphene edge by its peak position.

0 citations0 reviewsNo code linkedOpen access