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Yoon Jang Chung

Yoon Jang Chung contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Correlated states of 2D electrons near the Landau level filling $ν=1/7$

The ground state of two-dimensional electron systems (2DESs) at low Landau level filling factors ($ν\lesssim1/6$) has long been a topic of interest and controversy in condensed matter. Following the recent breakthrough in the quality of ultra-high-mobility GaAs 2DESs, we revisit this problem experimentally and investigate the impact of reduced disorder. In a GaAs 2DES sample with density $n=6.1\times10^{10}$ /cm$^2$ and mobility $μ=25\times10^6$ cm$^2$/Vs, we find a deep minimum in the longitudinal magnetoresistance ($R_{xx}$) at $ν=1/7$ when $T\simeq104$ mK. There is also a clear sign of a developing minimum in the $R_{xx}$ at $ν=2/13$. While insulating phases are still predominant when $ν\lesssim1/6$, these minima strongly suggest the existence of fractional quantum Hall states at filling factors that comply with the Jain sequence $ν=p/(2mp\pm1)$ even in the very low Landau level filling limit. The magnetic field dependent activation energies deduced from the relation $R_{xx}\propto e^{E_A/2kT}$ corroborate this view, and imply the presence of pinned Wigner solid states when $ν\neq p/(2mp\pm1)$. Similar results are seen in another sample with a lower density, further generalizing our observations.

preprint2022arXiv

Record-quality GaAs two-dimensional hole systems

The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport phenomena. Here we report ultra-high-quality (001) GaAs 2D hole systems, fabricated using molecular beam epitaxy and modulation doping, with mobility values as high as $5.8\times10^6$ cm$^2$/Vs at a hole density of $p=1.3\times10^{11}$ /cm$^2$, implying a mean-free path of $\simeq27$ $μ$m. In the low-temperature magnetoresistance trace of this sample, we observe high-order fractional quantum Hall states up to the Landau level filling $ν=12/25$ near $ν=1/2$. Furthermore, we see a deep minimum develop at $ν=1/5$ in the magnetoresistance of a sample with a much lower hole density of $p=4.0\times10^{10}$ /cm$^2$ where we measure a mobility of $3.6\times10^6$ cm$^2$/Vs. These improvements in sample quality were achieved by reduction of residual impurities both in the GaAs channel and the AlGaAs barrier material, as well as optimization in design of the sample structure.

preprint2022arXiv

Understanding limits to mobility in ultra-high-mobility GaAs two-dimensional electron systems: The quest for 100 million cm$^2$/Vs and beyond

For several decades now, ultra-high-mobility GaAs two-dimensional electron systems (2DESs) have served as the hallmark platform for various branches of research in condensed matter physics. Fundamental to this long-standing history of success for GaAs 2DESs was continuous sample quality improvement, which enabled scattering-free transport over macroscopic length scales as well as the emergence of a diverse range of exotic many-body phenomena. While the recent breakthrough in the quality of GaAs 2DESs grown by molecular beam epitaxy is highly commendable in this context, it is also important and timely to establish an up-to-date understanding of what obstructs us from pushing the mobility limit even further. Here, we present mobility data taken at a temperature of 0.3 K for a wide variety of state-of-the-art GaAs 2DESs, exhibiting a maximum, world-record mobility of $μ\simeq57\times10^6$ cm$^2$/Vs at a 2DES density of $n=1.55\times10^{11}$ /cm$^2$. We also provide comprehensive analyses of the collective scattering mechanisms that can explain the results. Furthermore, based on our study, we discuss potential scenarios where GaAs 2DES mobility values exceeding $100\times10^6$ cm$^2$/Vs could be achieved.

preprint2020arXiv

Working principles of doping-well structures for high-mobility two-dimensional electron systems

Suppressing electron scattering is essential to achieve high-mobility two-dimensional electron systems (2DESs) that are clean enough to probe exotic interaction-driven phenomena. In heterostructures it is common practice to utilize modulation doping, where the ionized dopants are physically separated from the 2DES channel. The doping-well structure augments modulation doping by providing additional screening for all types of charged impurities in the vicinity of the 2DES, which is necessary to achieve record-breaking samples. Despite its prevalence in the design of ultra-high-mobility 2DESs, the working principles of the doping-well structure have not been reported. Here we elaborate on the mechanics of electron transfer from doping wells to the 2DES, focusing on GaAs/AlGaAs samples grown by molecular beam epitaxy. Based on this understanding we demonstrate how structural parameters in the doping well can be varied to tune the properties of the 2DES.