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Yongsheng Gui

Yongsheng Gui appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2019arXiv

Microscopic mechanism of level attraction

The emerging level attraction from dissipative light-matter coupling converges the typical Rabi-splitting feature from coherent coupling and exhibits potentials in topological information processing. However, the underlying microscopic quantum mechanism of dissipative coupling still remains unclear, which brings difficulties in quantifying and manipulating coherence-dissipation competition and thereby the flexible control of level attraction. Here, by coupling magnon to a cavity supporting both standing and travelling waves, we identify the travelling-wave state to be responsible for magnon-photon dissipative coupling. By characterizing radiative broadening of magnon linewidth, we quantify the coherent and dissipative coupling strengths and their competition. The effective magnon-photon coupling strength, as a net result of competition, is analytically presented in quantum theory to show good agreement with measurements. In this manner, we extend the control dimension of level attraction by tuning field torque on magnetization or global cavity geometry. Our finding opens new routines to engineer coupled harmonic oscillator system.

preprint2016arXiv

Electrical Detection of Magnetization Dynamics via Spin Rectification Effects

The purpose of this article is to review the current status of a frontier in dynamic spintronics and contemporary magnetism, in which much progress has been made in the past decade, based on the creation of a variety of micro- and nano-structured devices that enable electrical detection of magnetization dynamics. The primary focus is on the physics of spin rectification effects, which are well suited for studying magnetization dynamics and spin transport in a variety of magnetic materials and spintronic devices. Intended to be intelligible to a broad audience, the paper begins with a pedagogical introduction, comparing the methods of electrical detection of charge and spin dynamics in semiconductors and magnetic materials respectively. After that it provides a comprehensive account of the theoretical study of both the angular dependence and line shape of electrically detected ferromagnetic resonance (FMR), which is summarized in a handbook formate easy to be used for analyzing experimental data. We then review and examine the similarity and differences of various spin rectification effects found in ferromagnetic films, magnetic bilayers and magnetic tunnel junctions, including a discussion of how to properly distinguish spin rectification from the spin pumping/inverse spin Hall effect generated voltage. After this we review the broad applications of rectification effects for studying spin waves, nonlinear dynamics, domain wall dynamics, spin current, and microwave imaging. We also discuss spin rectification in ferromagnetic semiconductors. The paper concludes with both historical and future perspectives, by summarizing and comparing three generations of FMR spectroscopy which have been developed for studying magnetization dynamics.