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Yonatan Cohen

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Published work

2 published item(s)

preprint2016arXiv

Charge of a quasiparticle in a superconductor

Non-linear charge transport in SIS Josephson junctions has a unique signature in the shuttled charge quantum between the two superconductors. In the zero-bias limit Cooper pairs, each with twice the electron charge, carry the Josephson current. An applied bias $V_{SD}$ leads to multiple Andreev reflections (MAR), which in the limit of weak tunneling probability should lead to integer multiples of the electron charge $ne$ traversing the junction, with $n$ integer larger than $2Δ/eV_{SD}$ and $Δ$ the superconducting order parameter. Exceptionally, just above the gap, $eV_{SD}>2Δ$, with Andreev reflections suppressed, one would expect the current to be carried by partitioned quasiparticles; each with energy dependent charge, being a superposition of an electron and a hole. Employing shot noise measurements in an SIS junction induced in an InAs nanowire (with noise proportional to the partitioned charge), we first observed quantization of the partitioned charge $q=e^*/e=n$, with $n=1-4$; thus reaffirming the validity of our charge interpretation. Concentrating next on the bias region $eV_{SD}{\approx}2Δ$, we found a reproducible and clear dip in the extracted charge to $q{\approx}0.6$, which, after excluding other possibilities, we attribute to the partitioned quasiparticle charge. Such dip is supported by numerical simulations of our SIS structure.

preprint2016arXiv

MBE growth of self-assisted InAs nanowires on graphene

Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ~50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs NWs with the graphene substrate was determined. A 30° orientation configuration of some of the InAs NWs is shown to be related to the surface corrugation of the graphene substrate. InAs NW-based devices for transport measurements were fabricated, and the conductance measurements showed a semi-ballistic behavior. In Josephson junction measurements in the non-linear regime, Multiple Andreev Reflections were observed, and an inelastic scattering length of about 900 nm was derived.