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Yonah Lemonik

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Published work

3 published item(s)

preprint2016arXiv

Entanglement properties of Floquet Chern insulators

Results are presented for the entanglement entropy and spectrum of half-filled graphene following the switch on of a circularly polarized laser. The laser parameters are chosen to correspond to several different Floquet Chern insulator phases. The entanglement properties of the unitarily evolved wavefunctions are compared with the state where one of the Floquet bands is completely occupied. The true states show a volume law for the entanglement, whereas the Floquet states show an area law. Qualitative differences are found in the entanglement properties of the off-resonant and on-resonant laser. Edge states are found in the entanglement spectrum corresponding to certain physical edge states expected in a Chern insulator. However, some edge states that would be expected from the Floquet band structure are missing from the entanglement spectrum. An analytic theory is developed for the long time structure of the entanglement spectrum. It is argued that only edge states corresponding to off-resonant processes appear in the entanglement spectrum.

preprint2016arXiv

Entanglement properties of the critical quench of O(N) bosons

The entanglement properties of quenched quantum systems have been studied for a decade, however results in dimensions other than $d=1$ are generally lacking. We remedy this by investigating the entanglement properties of bosonic critical systems in $d=3$, both numerically and analytically, comparing the free and the interacting critical quench of an $O(N)$ model. We find that the evolution of the entanglement entropy for these two systems is nearly identical, as expected from the "quasi-particle" picture. However, the low-lying entanglement spectrum is controlled by the different critical exponent of the two systems, and therefore these exponents may be extracted by purely entanglement-theoretic calculations. We verify this scaling numerically.

preprint2014arXiv

Quantum Memory Effects in Disordered Systems and Their Relation to 1/f Noise

We propose that memory effects in the conductivity of metallic systems can be produced by the same two levels systems that are responsible for the 1/f noise. Memory effects are extremely long-lived responses of the conductivity to changes in external parameters such as density or magnetic field. Using the quantum transport theory, we derive a universal relationship between the memory effect and the 1/f noise. Finally, we propose a magnetic memory effect, where the magneto-resistance is sensitive to the history of the applied magnetic field.