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Yimo Han

Yimo Han appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

6 published item(s)

preprint2026arXiv

Discovery of a new weberite-type antiferroelectric: La3NbO7

Antiferroelectrics are antipolar materials which possess an electric field-induced phase transition to a polar, ferroelectric phase and offer significant potential for sensing/actuation and energy-storage applications. Known antiferroelectrics are relatively scarce and mainly based on a limited set of perovskite materials and their alloys (e.g., PbZrO$_3$, AgNbO$_3$, NaNbO$_3$). Here, a new family of lead-free, weberite-type antiferroelectrics, identified through a large-scale, first-principles computational search is introduced. The screening methodology, which connects lattice dynamics to antipolar distortions, predicted that La$_3$NbO$_7$ could exhibit antiferroelectricity. We confirm the prediction through the synthesis and characterization of epitaxial La$_3$NbO$_7$ thin films, which display the signature double hysteresis loops of an antiferroelectric material as well as clear evidence of an antipolar ground state structure from transmission electron microscopy. The antiferroelectricity in La$_3$NbO$_7$ is simpler than most known antiferroelectrics and can be explained by a Kittel-type mechanism involving the movement of niobium atoms in an oxygen octahedron through a single phonon mode which results in a smaller change in the volume during the field-induced phase transition. Additionally, it is found that La$_3$NbO$_7$ combines a high threshold field with a high breakdown field ($\approx$ 6MV/cm) - which opens up opportunities for energy-storage applications. This new weberite-type family of materials offers many opportunities to tune electrical and temperature response especially through substitutions on the rare-earth site. Ultimately, this work demonstrates a successful data-driven theory-to-experiment discovery of an entirely new family of antiferroelectrics and provides a blueprint for the future design of ferroic materials.

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preprint2026arXiv

Topological textures and emergent altermagnetic signatures in ultrathin BiFeO3

Magnetoelectric multiferroics, materials with intrinsically coupled electric polarization and magnetic order, promise ultralow-power switching, nonvolatile memory, and energy-efficient signal transduction. Yet practical deployment demands ultrathin films down to the atomic limit, where both orders typically degrade. Maintaining both order parameters at the thinnest scales in complex oxides remains a tremendous challenge, as uncompensated bound charge drives nanoscale depolarization in most ferroelectrics, while off-stoichiometry, reduced anisotropy, and charge transfer can produce magnetic dead layers in ultrathin oxides at substrate interfaces. Here, we realize a multiferroic phase of BiFeO3 that not only sustains both order parameters at room temperature with no dead layer but also exhibits signatures of emergent altermagnetism in the four-unit-cell, ultrathin limit. First-principles calculations, spin symmetry analysis, atomic-resolution imaging, and angle-resolved magnetic imaging reveal that short-circuit electrostatic boundary conditions, together with epitaxial strain, drive a continuous second-order, thickness-driven phase transition that enables the formation of multiferroic topological textures. Moreover, the imposed boundary conditions stabilize a d-wave altermagnetic time-reversal symmetry breaking, with corresponding signatures observed in magnetic circular dichroism. Collectively, these results establish a pathway to stabilize unconventional multiferroicity at device-relevant thicknesses, reframing scaling limits for oxide electronics.

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preprint2022arXiv

Automatic Parameter Selection for Electron Ptychography via Bayesian Optimization

Electron ptychography provides new opportunities to resolve atomic structures with deep sub-angstrom spatial resolution and studying electron-beam sensitive materials with high dose efficiency. In practice, obtaining accurate ptychography images requires simultaneously optimizing multiple parameters that are often selected based on trial-and-error, resulting in low-throughput experiments and preventing wider adoption. Here, we develop an automatic parameter selection framework to circumvent this problem using Bayesian optimization with Gaussian processes. With minimal prior knowledge, the workflow efficiently produces ptychographic reconstructions that are superior than the ones processed by experienced experts. The method also facilitates better experimental designs by exploring optimized experimental parameters from simulated data.

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preprint2020arXiv

Imaging Polarity in Two Dimensional Materials by Breaking Friedel's Law

Friedel's law guarantees an inversion-symmetric diffraction pattern for thin, light materials where a kinematic approximation or a single-scattering model holds. Typically, breaking Friedel symmetry is ascribed to multiple scattering events within thick, non-centrosymmetric crystals. However, two-dimensional (2D) materials such as a single monolayer of MoS$_2$ can also violate Friedel's law, with unexpected contrast between conjugate Bragg peaks. We show analytically that retaining higher order terms in the power series expansion of the scattered wavefunction can describe the anomalous contrast between $hkl$ and $\overline{hkl}$ peaks that occurs in 2D crystals with broken in-plane inversion symmetry. These higher-order terms describe multiple scattering paths starting from the same atom in an atomically thin material. Furthermore, 2D materials containing heavy elements, such as WS$_2$, always act as strong phase objects, violating Friedel's law no matter how high the energy of the incident electron beam. Experimentally, this understanding can enhance diffraction-based techniques to provide rapid imaging of polarity, twin domains, in-plane rotations, or other polar textures in 2D materials.

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preprint2015arXiv

Chemical assembly of atomically thin transistors and circuits in a large scale

Next-generation electronics calls for new materials beyond silicon for increased functionality, performance, and scaling in integrated circuits. Carbon nanotubes and semiconductor nanowires are at the forefront of these materials, but have challenges due to the complex fabrication techniques required for large-scale applications. Two-dimensional (2D) gapless graphene and semiconducting transition metal dichalcogenides (TMDCs) have emerged as promising electronic materials due to their atomic thickness, chemical stability and scalability. Difficulties in the assembly of 2D electronic structures arise in the precise spatial control over the metallic and semiconducting atomic thin films. Ultimately, this impedes the maturity of integrating atomic elements in modern electronics. Here, we report the large-scale spatially controlled synthesis of the single-layer semiconductor molybdenum disulfide (MoS2) laterally in contact with conductive graphene. Transition electron microscope (TEM) studies reveal that the single-layer MoS2 nucleates at the edge of the graphene, creating a lateral 2D heterostructure. We demonstrate such chemically assembled 2D atomic transistors exhibit high transconductance (10 uS), on-off ratios (10^6), and mobility (20 cm^2 V^-1 s^-1). We assemble 2D logic circuits, such as a heterostructure NMOS inverter with a high voltage gain, up to 70, enabled by the precise site selectivity from atomically thin conducting and semiconducting crystals. This scalable chemical assembly of 2D heterostructures may usher in a new era in two-dimensional electronic circuitry and computing.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment

Van der Waals (vdW) heterojunctions composed of 2-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibit novel physics phenomena that can power high performance electronic and photonic applications. Here, we present the first demonstration of an important building block in vdW solids: room temperature (RT) Esaki tunnel diodes. The Esaki diodes were realized in vdW heterostructures made of black phosphorus (BP) and tin diselenide (SnSe2), two layered semiconductors that possess a broken-gap energy band offset. The presence of a thin insulating barrier between BP and SnSe2 enabled the observation of a prominent negative differential resistance (NDR) region in the forward-bias current-voltage characteristics, with a peak to valley ratio of 1.8 at 300 K and 2.8 at 80 K. A weak temperature dependence of the NDR indicates electron tunneling being the dominant transport mechanism, and a theoretical model shows excellent agreement with the experimental results. Furthermore, the broken-gap band alignment is confirmed by the junction photoresponse and the phosphorus double planes in a single layer of BP are resolved in transmission electron microscopy (TEM) for the first time. Our results represent a significant advance in the fundamental understanding of vdW heterojunctions, and widen the potential applications base of 2D layered materials.

0 citations0 reviewsNo code linkedOpen access