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Yichen Jin

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Published work

2 published item(s)

preprint2025arXiv

VideoCuRL: Video Curriculum Reinforcement Learning with Orthogonal Difficulty Decomposition

Reinforcement Learning (RL) is crucial for empowering VideoLLMs with complex spatiotemporal reasoning. However, current RL paradigms predominantly rely on random data shuffling or naive curriculum strategies based on scalar difficulty metrics. We argue that scalar metrics fail to disentangle two orthogonal challenges in video understanding: Visual Temporal Perception Load and Cognitive Reasoning Depth. To address this, we propose VideoCuRL, a novel framework that decomposes difficulty into these two axes. We employ efficient, training-free proxies, optical flow and keyframe entropy for visual complexity, Calibrated Surprisal for cognitive complexity, to map data onto a 2D curriculum grid. A competence aware Diagonal Wavefront strategy then schedules training from base alignment to complex reasoning. Furthermore, we introduce Dynamic Sparse KL and Structured Revisiting to stabilize training against reward collapse and catastrophic forgetting. Extensive experiments show that VideoCuRL surpasses strong RL baselines on reasoning (+2.5 on VSI-Bench) and perception (+2.9 on VideoMME) tasks. Notably, VideoCuRL eliminates the prohibitive inference overhead of generation-based curricula, offering a scalable solution for robust video post-training.

preprint2022arXiv

Realization of the electric-field driven "one-material"-based magnetic tunnel junction using van der Waals antiferromagnetic MnPX3 (X: S, Se)

Presently a lot of efforts are devoted to the investigation of new two-dimensional magnetic materials, which are considered as promising for the realization of the future electronics and spintronics devices. However, the utilization of these materials in different junctions requires complicated processing that in many cases leads to unwanted parasitic effects influencing the performance of the junctions. Here, we propose the new elegant approach for the realization of the "one-material"-based magnetic tunnel junction. The several layers of 2D van der Waals MnPX3 (X: S, Se), which is insulating antiferromagnet in its ground state, are used and the effect of the applied external electric filed leads to the half-metallic ferromagnetic states for the outermost layers of the MnPX3 stack. The rich states diagram of such magnetic tunnel junction permits to precisely control its tunneling conductivity. The realized "one-material"-based magnetic tunnel junction allows to avoid all effects connected with the lattice mismatches and carriers scattering effects at the materials interfaces, giving high perspectives for the application of such systems in electronics and spintronics.