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Yanzhao Liu

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Published work

5 published item(s)

preprint2021arXiv

Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices

Recently, the intrinsic magnetic topological insulator MnBi2Te4 has attracted enormous research interest due to the great success in realizing exotic topological quantum states, such as the quantum anomalous Hall effect (QAHE), axion insulator state, high-Chern-number and high-temperature Chern insulator states. One key issue in this field is to effectively manipulate these states and control topological phase transitions. Here, by systematic angle-dependent transport measurements, we reveal a magnetization-tuned topological quantum phase transition from Chern insulator to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. Specifically, as the magnetic field is tilted away from the out-of-plane direction by around 40-60 degrees, the Hall resistance deviates from the quantization value and a colossal, anisotropic magnetoresistance is detected. The theoretical analyses based on modified Landauer-Buttiker formalism show that the field-tilt-driven switching from ferromagnetic state to canted antiferromagnetic state induces a topological quantum phase transition from Chern insulator to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. Our work provides an efficient means for modulating topological quantum states and topological quantum phase transitions.

preprint2020arXiv

Eightfold Fermionic Excitation in a Charge Density Wave Compound

Unconventional quasiparticle excitations in condensed matter systems have become one of the most important research frontiers. Beyond two- and fourfold degenerate Weyl and Dirac fermions, three-, six- and eightfold symmetry protected degeneracies have been predicted however remain challenging to realize in solid state materials. Here, charge density wave compound TaTe4 is proposed to hold eightfold fermionic excitation and Dirac point in energy bands. High quality TaTe4 single crystals are prepared, where the charge density wave is revealed by directly imaging the atomic structure and a pseudogap of about 45 meV on the surface. Shubnikov de-Haas oscillations of TaTe4 are consistent with band structure calculation. Scanning tunneling microscopy reveals atomic step edge states on the surface of TaTe4. This work uncovers that charge density wave is able to induce new topological phases and sheds new light on the novel excitations in condensed matter materials.

preprint2020arXiv

High-Chern-Number and High-Temperature Quantum Hall Effect without Landau Levels

The quantum Hall effect (QHE) with quantized Hall resistance of h/νe2 starts the research on topological quantum states and lays the foundation of topology in physics. Afterwards, Haldane proposed the QHE without Landau levels, showing nonzero Chern number |C|=1, which has been experimentally observed at relatively low temperatures. For emerging physics and low-power-consumption electronics, the key issues are how to increase the working temperature and realize high Chern numbers (C>1). Here, we report the experimental discovery of high-Chern-number QHE (C=2) without Landau levels and C=1 Chern insulator state displaying nearly quantized Hall resistance plateau above the Néel temperature in MnBi2Te4 devices. Our observations provide a new perspective on topological matter and open new avenues for exploration of exotic topological quantum states and topological phase transitions at higher temperatures.

preprint2020arXiv

Type-II Ising superconductivity and anomalous metallic state in macro-size ambient-stable ultrathin crystalline films

Recent emergence of two-dimensional (2D) crystalline superconductors has provided a promising platform to investigate novel quantum physics and potential applications. To reveal essential quantum phenomena therein, ultralow temperature transport investigation on high quality ultrathin superconducting films is critically required, although it has been quite challenging experimentally. Here we report a systematic transport study on the ultrathin crystalline PdTe2 films grown by molecular beam epitaxy (MBE). Interestingly, a new type of Ising superconductivity in 2D centrosymmetric materials is revealed by the detection of large in-plane critical field more than 7 times Pauli limit. Remarkably, in perpendicular magnetic field, we provide solid evidence of anomalous metallic state characterized by the resistance saturation at low temperatures with high quality filters. The robust superconductivity with intriguing quantum phenomena in the macro-size ambient-stable ultrathin PdTe2 films remains almost the same for 20 months, showing great potentials in electronic and spintronic applications.

preprint2015arXiv

Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact

The discovery of graphene has ignited intensive investigation on two dimensional (2D) materials. Among them, transition metal dichalcogenide (TMDC), a typical representative, attracts much attention due to the excellent performance in field effect transistor (FET) related measurements and applications. Particularly, when TMDC eventually reaches few-layer dimension, a wide range of electronic and optical properties, in striking contrast to bulk samples, are detected. In this Letter, we synthesized single crystalline WS2 nanoflakes by physical vapor deposition (PVD) method and carried out a series of transport measurements of contact resistance and magnetoresistance. Focused ion beam (FIB) technology was applied to deposit Pt electrodes on WS2 flakes. Different from the electron beam lithography (EBL) fabricated electrodes, FIB-deposited leads exhibited ohmic contact, resolving the dilemma of Schottky barrier. Furthermore, a temperature-modulated negative-to-positive transition of magnetoresistance (MR) associated with a crossover of carrier type at similar temperature was demonstrated. Our work offers a pathway to optimize the contact for TMDC and reveals the magnetoresistance characteristics of WS2 flakes, which may stimulate further studies on TMDC and corresponding potential electronic and optoelectronic applications.