BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Yanxia Xing

Yanxia Xing appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sci

Catalog footprint

What is connected

14works
2topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

14 published item(s)

preprint2018arXiv

Geometric Effect on Quantum Anomalous Hall States in Magnetic Topological Insulators

An intriguing observation on the quantum anomalous Hall effect (QAHE) in magnetic topological insulators (MTIs) is the dissipative edge states, where quantized Hall resistance is accompanied by nonzero longitudinal resistance. We numerically investigate this dissipative behavior of QAHE in MTIs with a three-dimensional tight-binding model and non-equilibrium Greens function formalism. It is found that, in clean samples, the geometric mismatch between the detecting electrodes and the MTI sample leads to additional scattering in the central Hall bar, which is similar to the effect of splitting gates in the traditional Hall effect. As a result, while the Hall resistance remains quantized, the longitudinal resistance deviates from zero due to such additional scattering. It is also shown that external magnetic fields as well as disorder scattering can suppress the dissipation of the longitudinal resistance. These results are in good agreement with previous experimental observations and provide insight on the fabrication of QAHE devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Coherent Single Spin Source based on topological insulator

We report on the injection of quantized pure spin current into quantum conductors. In particular, we propose an on demand single spin source generated by periodically varying the gate voltages of two quantum dots that are connected to a two dimensional topological insulator via tunneling barriers. Due to the nature of the helical states of the topological insulator, one or several {\it spin pair}s can be pumped out per cycle giving rise to a pure quantized alternating spin current. Depending on the phase difference between two gate voltages, this device can serve as an on demand single spin emitter or single charge emitter. Again due to the helicity of the topological insulator, the single spin emitter or charge emitter is dissipationless and immune to disorders. The proposed single spin emitter can be an important building block of future spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nonlocal transport in a hybrid two-dimensional topological insulator

We study nonlocal resistance in an H-shaped two-dimensional HgTe/CdTe quantum well consist of injector and detector, both of which can be tuned in the quantum spin Hall or metallic spin Hall regime. Because of strong spin-orbit interaction, there always exist spin Hall effect and the nonlocal resistance in HgTe/CdTe quantum well. We find that when both detector and injector are in the quantum spin Hall regime, the nonlocal resistance is quantized at $0.25\frac{h}{e^2}$, which is robust against weak disorder scattering and small magnetic field. While beyond this regime, the nonlocal resistance decreases rapidly and will be strongly suppressed by disorder and magnetic field. In the presence of strong magnetic field, the quantum spin Hall regime will be switched into the quantum Hall regime and the nonlocal resistance will disappear. The nonlocal signal and its various manifestation in different hybrid regimes originate from the special band structure of HgTe/CdTe quantum well, and can be considered as the fingerprint of the helical quantum spin Hall edge states in two-dimensional topological insulator.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Disorder induced quantized conductance with fractional value and universal conductance fluctuation in three-dimensional topological insulators

We report a theoretical investigation on the conductance and its fluctuation of three-dimensional topological insulators (3D TI) in $Bi_2Se_3$ and $Sb_2Te_3$ in the presence of disorders. Extensive numerical simulations are carried out. We find that in the diffusive regime the conductance is quantized with fractional value. Importantly, the conductance fluctuation is also quantized with a universal value. For 3D TI connected by two terminals, three independent conductances $G_{zz}$, $G_{xx}$ and $G_{zx}$ are identified where z is the normal direction of quintuple layer of 3D TI (see inset of Fig.1). The quantized conductance are found to be $<G_{zz}>=1$, $<G_{xx}>=4/3$ and $<G_{zx}>=6/5$ with corresponding quantized conductance fluctuation 0.54, 0.47, and 0.50. The quantization of average conductance and its fluctuation can be understood by theory of mode mixing. The experimental realization that can observe the quantization of average conductance is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Topological Anderson insulator phenomena

We study the nature of the disorder-induced quantized conductance, i.e., the phenomena of topological Anderson insulator (TAI) induced in HgTe/CdTe semiconductor quantum well. The disorder effect in several different systems where anomalous Hall effect exist, is numerically studied using the tight-binding Hamiltonian. It is found that the TAI phenomena also occur in the modified Dirac model where the quadratic corrections $k^2σ_z$ is included and electron-hole symmetry is kept. It also occurs in the graphene system with the next nearest-neighbor coupling and staggered sublattice potential. Comparison between the localization lengths of the 2D ribbon and 2D cylinder clearly reveals the topological nature of this phenomena. Furthermore, analysis on the local current density in anomalous quantum Hall systems where the TAI phenomena can or can not arise reveals the nature of TAI phenomena: the bulk state is killed drastically and only the robust edge state survives in a moderate disorder. When the edge state is robust enough to resist the strong disorder that can completely kills the bulk state, TAI phenomena arise.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

First-principles investigation of dynamical properties of molecular devices under a steplike pulse

We report a computationally tractable approach to first principles investigation of time-dependent current of molecular devices under a step-like pulse. For molecular devices, all the resonant states below Fermi level contribute to the time-dependent current. Hence calculation beyond wideband limit must be carried out for a quantitative analysis of transient dynamics of molecules devices. Based on the exact non-equilibrium Green's function (NEGF) formalism of calculating the transient current in Ref.\onlinecite{Maciejko}, we develop two approximate schemes going beyond the wideband limit, they are all suitable for first principles calculation using the NEGF combined with density functional theory. Benchmark test has been done by comparing with the exact solution of a single level quantum dot system. Good agreement has been reached for two approximate schemes. As an application, we calculate the transient current using the first approximated formula with opposite voltage $V_L(t)=-V_R(t)$ in two molecular structures: Al-${\rm C}_{5}$-Al and Al-${\rm C}_{60}$-Al. As illustrated in these examples, our formalism can be easily implemented for real molecular devices. Importantly, our new formula has captured the essential physics of dynamical properties of molecular devices and gives the correct steady state current at $t=0$ and $t\rightarrow \infty$.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Nernst and Seebeck effect in a graphene nanoribbon

The thermoelectric power, including the Nernst and Seebeck effects, in graphene nanoribbon is studied. By using the non-equilibrium Green function combining with the tight-binding Hamiltonian, the Nernst and Seebeck coefficients are obtained. Due to the electron-hole symmetry, the Nernst coefficient is an even function of the Fermi energy while the Seebeck coefficient is an odd function regardless of the magnetic field. In the presence of a strong magnetic field, the Nernst and Seebeck coefficients are almost independent of the chirality and width of the nanoribbon, and they show peaks when the Fermi energy crosses the Landau levels. The height of $n$-th (excluding $n=0$) peak is $[\ln2/|n|]$ for the Nernst effect and is $\ln2/n$ for the Seebeck effect. For the zeroth peak, it is abnormal with height $[2\ln2]$ for the Nernst effect and the peak disappears for the Seebeck effect. When the magnetic field is turned off, however, the Nernst effect is absent and only Seebeck effect exists. In this case, the Seebeck coefficient strongly depends on the chirality of the nanoribbon. The peaks are equidistant for the nanoribbons with zigzag edge but are irregularly distributed for the armchair edge. In particular, for the insulating armchair ribbon, the Seebeck coefficient can be very large near the Dirac point. When the magnetic field varies from zero to large values, the differences among the Seebeck coefficients for different chiral ribbons gradually vanish and the nonzero value of Nernst coefficient appears first near the Dirac point then gradually extents to the whole energy region.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The focusing of electron flow in a bipolar Graphene ribbon with different chiralities

The focusing of electron flow in a symmetric p-n junction (PNJ) of graphene ribbon with different chiralities is studied. Considering the PNJ with the sharp interface, in a armchair ribbon, the electron flow emitting from $(-L,0)$ in n-region can always be focused perfectly at $(L,0)$ in p-region in the whole Dirac fermion regime, i.e. in whole regime $E_0<t$ where $E_0$ is the distance between Dirac-point energy and Fermi energy and $t$ is the nearest hopping energy. For the bipolar ribbon with zigzag edge, however, the incoming electron flow in n-region is perfectly converged in p-region only in a very low energy regime with $E_0<0.05t$. Moreover, for a smooth PNJ, electrons are backscattered near PNJ, which weakens the focusing effect. But the focusing pattern still remains the same as that of the sharp PNJ. In addition, quantum oscillation in charge density occurs due to the interference between forward and backward scattering. Finally, in the presence of weak perpendicular magnetic field, charge carriers are deflected in opposite directions in the p-region and n-region. As a result, the focusing effect is smeared. The lower energy $E_0$, the easier the focusing effect is destroyed. For the high energy $E_0$ (e.g. $E_0=0.9t$), however, the focusing effect can still survive in a moderate magnetic field on order of one Tesla.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The parity of specular Andreev reflection under mirror operation in zigzag graphene ribbon

It is known that the parity of reflection amplitude can either be even or odd under the mirror operation. Up to now, all the parities of reflection amplitude in the one-mode energy region are even under the mirror operation. In this paper, we give an example of odd parity for Andreev reflection (AR) in a three-terminal graphene-supercondutor hybrid systems. We found that the parity is even for the Andreev retroreflection (ARR) and odd for specular Andreev reflection (SAR). We attribute this remarkable phenomenon to the distinct topology of the band structure of graphene and the specular Andreev reflection involving two energy bands with different parity symmetry. As a result of odd parity of SAR, the SAR probability of a four-terminal system with two superconducting leads (two reflection interfaces) can be zero even when the system is asymmetric due to the quantum interference of two ARs.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Universal Conductance Fluctuations in Mesoscopic Systems with Superconducting Leads: Beyond the Andreev Approximation

We report our investigation of the sample to sample fluctuation in transport properties of phase coherent normal metal-superconductor hybrid systems. Extensive numerical simulations were carried out for quasi-one dimensional and two dimensional systems in both square lattice (Fermi electron) as well as honeycomb lattice (Dirac electron). Our results show that when the Fermi energy is within the superconducting energy gap $Δ$, the Andreev conductance fluctuation exhibits a universal value (UCF) which is approximately two times larger than that in the normal systems. According to the random matrix theory, the electron-hole degeneracy (ehD) in the Andreev reflections (AR) plays an important role in classifying UCF. Our results confirm this. We found that in the diffusive regime there are two UCF plateaus, one corresponds to the complete electron-hole symmetry (with ehD) class and the other to conventional electron-hole conversion (ehD broken). In addition, we have studied the Andreev conductance distribution and found that for the fixed average conductance $,G>$ the Andreev conductance distribution is a universal function that depends only on the ehD. In the localized regime, our results show that ehD continues to serve as an indicator for different universal classes. Finally, if normal transport is present, i.e., Fermi energy is beyond energy gap $Δ$, the AR is suppressed drastically in the localized regime by the disorder and the ehD becomes irrelevant. As a result, the conductance distribution is that same as that of normal systems.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Controllable Andreev retroreflection and specular Andreev reflection in a four-terminal graphene-superconductor hybrid system

We report the investigation of electron transport through a four-terminal graphene-superconductor hybrid system. Due to the quantum interference of the reflected holes from two graphene-superconductor interfaces with phase difference $θ$, it is found that the specular Andreev reflection vanishes at $θ=0$ while the Andreev retroreflection disappears at $θ=π$. This means that the retroreflection and specular reflection can be easily controlled and separated in this device. In addition, due to the diffraction effect in the narrow graphene nanoribbon, the reflected hole can exit from both graphene terminals. As the width of nanoribbon increases, the diffraction effect gradually disappears and the reflected hole eventually exits from a particular graphene terminal depending on the type of Andreev reflection.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Transient dynamics of molecular devices under step-like pulse bias

We report first principles investigation of time-dependent current of molecular devices under a step-like pulse.Our results show that although the switch-on time of the molecular device is comparable to the transit time, much longer time is needed to reach the steady state. In reaching the steady state the current is dominated by resonant states below Fermi level. The contribution of each resonant state to the current shows the damped oscillatory behavior with frequency equal to the bias of the step-like pulse and decay rate determined by the life time of the corresponding resonant state. We found that all the resonant states below Fermi level have to be included for accurate results. This indicates that going beyond wideband limit is essential for a quantitative analysis of transient dynamics of molecular devices.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Josephson current transport through a Quantum Dot in an Aharonov-Bohm Ring

The Josephson current through an Aharonov-Bohm (AB) interferometer, in which a quantum dot (QD) is situated on one arm and a magnetic flux $Φ$ threads through the ring, has been investigated. With the existence of the magnetic flux, the relation of the Josephson current and the superconductor phase is complex, and the system can be adjusted to $π$ junction by either modulating the magnetic flux or the QD's energy level $\varepsilon_d$. Due to the electron-hole symmetry, the Josephson current $I$ has the property $I(\varepsilon_d,Φ)=I(-\varepsilon_d,Φ+π)$. The Josephson current exhibits a jump when a pair of Andreev bound states aligns with the Fermi energy. The condition for the current jump is given. In particularly, we find that the position of the current jump and the position of the maximum value of the critical current $I_c$ are identical. Due to the interference between the two paths, the critical current $I_c$ versus the QD's level $\varepsilon_d$ shows a typical Fano shape, which is similar to the Fano effect in the corresponding normal device. But they also show some differences. For example, the critical current never reaches zero for any parameters, while the current in the normal device can reach zero at the destruction point.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Response time of a normal-superconductor hybrid system under the step-like pulse bias

The response of a quantum dot coupled with one normal lead and a superconductor lead driven by a step-like pulse bias $V_L$ is studied using the non-equilibrium Green function method. In the linear pulse bias regime, the responses of the upwards and downwards bias are symmetric. In this regime the turn-on time and turn-off time are much slower than that of the normal system due to the Andreev reflection. On the other hand, for the large pulse bias $V_L$, the instantaneous current exhibits oscillatory behaviors with the frequency $\hbarΩ=qV_L$. The turn on/off times are in (or shorter than) the scale of $1/V_L$, so they are faster for the larger bias $V_L$. In addition, the responses for the upwards and downwards bias are asymmetric at large $V_L$. The turn-on time is larger than the turn-off time but the relaxation time \cite{note1} depends only on the coupling strength $Γ$ and it is much smaller than the turn-on/off times for the large bias $V_L$.

0 citations0 reviewsNo code linkedOpen access