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Researcher profile

Yann Chalopin

Yann Chalopin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2014arXiv

Classical to quantum transition of near-field heat transfer between two nanoparticles

Heat transfer between two silica clusters is investigated by using the non-equilibrium Green's function method. In the gap range between 4 Å and three times the cluster size, the thermal conductance decreases as predicted by the surface charge-charge interaction. Above five times the cluster size, the volume dipole-dipole interaction predominates. Finally, when the distance becomes smaller than 4 Å, a quantum interaction where the electrons of both clusters are shared takes place. This quantum interaction leads to the dramatic increase of the thermal coupling between neighbor clusters due to strong interactions. This study finally provides a description of the transition between radiation and heat conduction in gaps smaller than a few nanometers.

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preprint2014arXiv

Microscopic Description of Coherent Transport by Thermal Phonons

We demonstrate the coherent transport of thermal energy in superlattices by introducing a microscopic definition of the phonon coherence length. We demonstrate how to distinguish a coherent transport regime from diffuse interface scattering and discuss how these can be specifically controlled by several physical parameters. Our approach provides a convenient framework for the interpretation of previous experiments and thermal conductivity calculations and paves the way for the design of a new class of thermal interface materials.

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preprint2014arXiv

Thermal Interface Conductance between Aluminum and Silicon by Molecular Dynamics Simulations

The thermal interface conductance between Al and Si was simulated by a non-equilibrium molecular dynamics method. In the simulations, the coupling between electrons and phonons in Al are considered by using a stochastic force. The results show the size dependence of the interface thermal conductance and the effect of electron-phonon coupling on the interface thermal conductance. To understand the mechanism of interface resistance, the vibration power spectra are calculated. We find that the atomic level disorder near the interface is an important aspect of interfacial phonon transport, which leads to a modification of the phonon states near the interface. There, the vibrational spectrum near the interface greatly differs from the bulk. This change in the vibrational spectrum affects the results predicted by AMM and DMM theories and indicates new physics is involved with phonon transport across interfaces. Keywords:

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preprint2013arXiv

Quantized Thermal Conductance of Nanowires at Room Temperature due to Surface Phonon-Polaritons

Based on the Landauer formalism, we demonstrate that the thermal conductance due to the propagation of surface phonon-polaritons along a polar nanowire is independent of the material characteristics and is given by Pi^2kB^2T/3h. The giant propagation length of these energy carriers establishes that this quantization holds not only for a temperature much smaller than 1 K, as is the case of electrons and phonons, but also for temperatures comparable to room temperature, which can significantly facilitate its observation and application in the thermal management of nanoscale electronics and photonics.

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