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Yandong Ma

Yandong Ma appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.comp-ph

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Published work

14 published item(s)

preprint2022arXiv

2D magnetoelectric multiferroics in MnSTe/In2Se3 heterobilayer with ferroelectrically controllable skyrmions

The magnetoelectric effect and skyrmions are two fundamental phenomena in the field of condensed-matter physics. Here, using first-principles calculations and Monte-Carlo simulations, we propose that strong magnetoelectric coupling can be demonstrated in a multiferroic heterobilayer consisting of two-dimensional (2D) MnSTe and α-In2Se3. As the electric polarization in ferroelectric α-In2Se3 is switched, the creation and annihilation of topological magnetic phase can be achieved in this multiferroic heterobilayer, giving rise to the intriguing ferroelectrically controllable skyrmions. This feature is further revealed to be closely related to the physical quantity of D2/|KJ|, which is generally applicable for describing the required conditions of such physics. Moreover, the evaluations of their topological magnetic phases with temperature are systematically discussed. These insights not only greatly enrich the research on 2D magnetoelectric multiferroics, but also pave a promising avenue to realize new skyrmionic device concepts.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Antiferromagnetic skyrmion crystal in Janus monolayer CrSi2N2As2

Antiferromagnetic skyrmion crystal (AF-SkX), a regular array of antiferromagnetic skyrmions, is a fundamental phenomenon in the field of condensed-matter physics. So far, only very few proposals have been made to realize the AF-SkX, and most based on three-dimensional (3D) materials. Herein, using first-principles calculations and Monte-Carlo simulations, we report the identification of AF-SkX in two-dimensional lattice of Janus monolayer CrSi2N2As2. Arising from the broken inversion symmetry and strong spin-orbit coupling, large Dzyaloshinskii-Moriya interaction is obtained in Janus monolayer CrSi2N2As2. This, combined with the geometric frustration of its triangular lattice, gives rise to the skyrmion physics and long-sought AF-SkX in the presence of external magnetic field. More intriguingly, this system presents two different antiferromagnetic skyrmion phases, and such phenomenon is distinct from those reported in 3D systems. Furthermore, by contacting with Sc2CO2, the creation and annihilation of AF-SkX in Janus monolayer CrSi2N2As2 can be achieved through ferroelectricity. These findings greatly enrich the research on antiferromagnetic skyrmions.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Layer-Polarized Anomalous Hall Effect in Valleytronic van der Waals Bilayers

Layer-polarized anomalous Hall effect (LP-AHE), derived from the coupling between Berry curvature and layer degree of freedom, is of importance for both fundamental physics and device applications. Nonetheless, the current research paradigm is rooted in topological systems, rendering such phenomenon rather scarce. Here, through model analysis, we propose an alternative, but general mechanism to realize the LP-AHE in valleytronic van der Waals bilayers by interlayer sliding. The interaction between the out-of-plane ferroelectricity and A-type antiferromagnetism gives rise to the layer-locked Berry curvature and thus the long-sought LP-AHE in the bilayer systems. The LP-AHE can be strongly coupled with sliding ferroelectricity, to enable ferroelectrically controllable and reversible. The mechanism is demonstrated in a series of real valleytronic materials, including bilayer VSi2P4, VSi2N4, FeCl2, RuBr2 and VClBr. The new mechanism and phenomena provide a significant new direction to realize LP-AHE and explore its application in electronics.

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preprint2022arXiv

Spontaneous magnetic skyrmions in single-layer CrInX3(X=Te, Se)

The realization of magnetic skyrmions in nanostructures holds great promise for both fundamental research and device applications. Despite recent progress, intrinsic magnetic skyrmions in two-dimensional lattice are still rarely explored. Here, using first-principles calculations and Monte-Carlo simulations, we report the identification of spontaneous magnetic skyrmions in single-layer CrInX3 (X = Te, Se). Due to the joint effect of broken inversion symmetry and strong spin-orbit coupling, inherent large Dzyaloshinskii-Moriya interaction occurs in both systems, endowing the intriguing Neel-type skyrmions in the absence of magnetic field. By further imposing moderate magnetic field, the skyrmion phase can be obtained and is stable within a wide temperature range. Particularly for single-layer CrInTe3, the size of skyrmions is sub-10 nm and the skyrmion phase can be maintained at an elevated temperature of 180 K. In addition, the phase diagrams of their topological spin textures under the variation of magnetic parameters of D, J, and K are mapped out. Our results greatly enrich the research of 2D skyrmionics physics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Intertwined Ferroelectricity and Topological State in Two-Dimensional Multilayer

The intertwined ferroelectricity and band topology will enable the non-volatile control of the topological states, which is of importance for nanoelectrics with low energy costing and high response speed. Nonetheless, the principle to design the novel system is unclear and the feasible approach to achieve the coexistence of two parameter orders is absent. Here, we propose a general paradigm to design 2D ferroelectric topological insulators by sliding topological multilayers on the basis of first-principles calculations. Taking trilayer Bi2Te3 as a model system, we show that in the van der Waals multilayer based 2D topological insulators, the in-plane and out-of-plane ferroelectricity can be induced through a specific interlayer sliding, to enable the coexistence of ferroelectric and topological orders. The strong coupling of the order parameters renders the topological states sensitive to polarization flip, realizing non-volatile ferroelectric control of topological properties. The revealed design-guideline and ferroelectric-topological coupling not only are useful for the fundamental research of the coupled ferroelectric and topological physics in 2D lattices, but also enable novel applications in nanodevices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Single-Layer ScI2: A Paradigm for Valley-Related Multiple Hall Effect

Valley-related multiple Hall effect in two-dimensional lattice is of notable interest both for its fundamental physics and for its potential applications. In this work, by means of a low energy kp model analysis, a mechanism of producing valley-related multiple Hall effect in hexagonal lattice via strain engineering is proposed, and a general picture of valley-contrasted band inversion is developed. Through first-principles calculations, this mechanism is further established in a ferromagnetic hexagonal lattice of single-layer ScI2. Single-layer ScI2 prefers in-plane magnetization and exhibits neither anomalous valley Hall effect nor valley-polarized quantum anomalous Hall effect in nature. Remarkably, these two Hall effects emerge simultaneously in this system under 4.705% tensile strain and disappear simultaneously when further increasing strain, suggesting the exotic valley-related multiple Hall effect. The underlying physical mechanism is revealed using a model analysis and is generally applicable. Our work greatly enriches the valley-related physics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-FeCl2

Valley, as a new degree of freedom for electrons, has drawn considerable attention due to its significant potential for encoding and storing information. Lifting the energy degeneracy to achieve valley polarization is necessary for realizing valleytronic devices. Here, on the basis of first-principles calculations, we show that single-layer FeCl2 exhibits a large spontaneous valley polarization (~101 meV) arising from the broken time-reversal symmetry and spin-orbital coupling, which can be continuously tuned by varying the direction of magnetic crystalline. By employing the perturbation theory, the underlying physical mechanism is unveiled. Moreover, the coupling between valley degree of freedom and ferromagnetic order could generate a spin- and valley-polarized anomalous Hall current in the presence of the in-plane electric field, facilitating its experimental exploration and practical applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Multiferroic Decorated Fe2O3 Monolayer Predicted from First Principles

Two-dimensional (2D) multiferroics exhibit cross-control capacity between magnetic and electric responses in reduced spatial domain, making them well suited for next-generation nanoscale devices; however, progress has been slow in developing materials with required characteristic properties. Here we identify by first-principles calculations robust 2D multiferroic behaviors in decorated Fe2O3 monolayer, showcasing N@Fe2O3 as a prototypical case, where ferroelectricity and ferromagnetism stem from the same origin, namely Fe d-orbit splitting induced by the Jahn-Teller distortion and associated crystal field changes. The resulting ferromagnetic and ferroelectric polarization can be effectively reversed and regulated by applied electric field or strain, offering efficient functionality. These findings establish strong materials phenomena and elucidate underlying physics mechanism in a family of truly 2D multiferroics that are highly promising for advanced device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Discovery of a two-dimensional topological insulator in SiTe

Two-dimensional (2D) topological insulators (TIs), a new state of quantum matter, are promising for achieving the low-power-consuming electronic devices owning to the remarkable robustness of their conducting edge states against backscattering. Currently, the major challenge to further studies and possible applications is the lack of suitable materials, which should be with high feasibility of fabrication and sizeable nontrivial gaps. Here, we demonstrate through first-principles calculations that SiTe 2D crystal is a promising 2D TI with a sizeable nontrivial gap of 0.220 eV. This material is dynamically and thermally stable. Most importantly, it could be easily exfoliated from its three-dimensional superlattice due to the weakly bonded layered structure. Moreover, strain engineering can effectively control its nontrivial gap and even induce a topological phase transition. Our results provide a realistic candidate for experimental explorations and potential applications of 2D TIs.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Anisotropic Ripple Deformation in Phosphorene

Two-dimensional materials tend to become crumpled according to the Mermin-Wagner theorem, and the resulting ripple deformation may significantly influence electronic properties as observed in graphene and MoS2. Here we unveil by first-principles calculations a new, highly anisotropic ripple pattern in phosphorene, a monolayer black phosphorus, where compression induced ripple deformation occurs only along the zigzag direction in the strain range up to 10%, but not the armchair direction. This direction-selective ripple deformation mode in phosphorene stems from its puckered structure with coupled hinge-like bonding configurations and the resulting anisotropic Poisson ratio. We also construct an analytical model using classical elasticity theory for ripple deformation in phosphorene under arbitrary strain. The present results offer new insights into the mechanisms governing the structural and electronic properties of phosphorene crucial to its device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Quantum Spin Hall Effect and Topological Phase Transition in Two-Dimensional Square Transition Metal Dichalcogenides

Two-dimensional (2D) topological insulators (TIs) hold promise for applications in spintronics based on the fact that the propagation direction of edge electrons of a 2D TI is robustly linked to their spin origination. Here, with the use of first-principles calculations, we predict a family of robust 2D TIs in monolayer square transition metal dichalcogenides (MoS2, MoSe2, MoTe2, WS2, WSe2, and WTe2). Sizeable intrinsic nontrivial bulk band gaps ranging from 24 to 187 meV are obtained, guarantying the quantum spin Hall (QSH) effect observable at room temperature in these new 2D TIs. Significantly different from most known 2D TIs with comparable band gaps, these sizeable energy gaps originate from the strong spin-orbit interaction related to the pure d electrons of the Mo/W atoms around the Fermi level. A single pair of topologically protected helical edge states is established for the edge of these systems with the Dirac point locating in the middle of the bulk band gap, and their topologically nontrivial states are also confirmed with nontrivial topological invariant Z2 = 1. More interestingly, by controlling the applied strain, a topological quantum phase transition between a QSH phase and a metallic phase or a trivial insulating phase can be realized in these 2D materials, and the detailed topological phase diagram is established.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tetragonal Bismuth Bilayer: A Stable and Robust Quantum Spin Hall Insulator

Topological insulators (TIs) exhibit novel physics with great promise for new devices, but considerable challenges remain to identify TIs with high structural stability and large nontrivial band gap suitable for practical applications. Here we predict by first-principles calculations a two-dimensional (2D) TI, also known as a quantum spin Hall (QSH) insulator, in a tetragonal bismuth bilayer (TB-Bi) structure that is dynamically and thermally stable based on phonon calculations and finite-temperature molecular dynamics simulations. Density functional theory and tight-binding calculations reveal a band inversion among the Bi-p orbits driven by the strong intrinsic spin-orbit coupling, producing a large nontrivial band gap, which can be effectively tuned by moderate strains. The helical gapless edge states exhibit a linear dispersion with a high Fermi velocity comparable to that of graphene, and the QSH phase remains robust on a NaCl substrate. These remarkable properties place TB-Bi among the most promising 2D TIs for high-speed spintronic devices, and the present results provide insights into the intriguing QSH phenomenon in this new Bi structure and offer guidance for its implementation in potential applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Two-Dimensional Inversion Asymmetric Topological Insulators in Functionalized III-Bi Bilayers

The search for inversion asymmetric topological insulators (IATIs) persists as an effect for realizing new topological phenomena. However, so for only a few IATIs have been discovered and there is no IATI exhibiting a large band gap exceeding 0.6 eV. Using first-principles calculations, we predict a series of new IATIs in saturated Group III-Bi bilayers. We show that all these IATIs preserve extraordinary large bulk band gaps which are well above room-temperature, allowing for viable applications in room-temperature spintronic devices. More importantly, most of these systems display large bulk band gaps that far exceed 0.6 eV and, part of them even are up to ~1 eV, which are larger than any IATIs ever reported. The nontrivial topological situation in these systems is confirmed by the identified band inversion of the band structures and an explicit demonstration of the topological edge states. Interestingly, the nontrivial band order characteristics are intrinsic to most of these materials and are not subject to spin-orbit coupling. Owning to their asymmetric structures, remarkable Rashba spin splitting is produced in both the valence and conduction bands of these systems. These predictions strongly revive these new systems as excellent candidates for IATI-based novel applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Two-Dimensional Transition Metal Dichalcogenides with a Hexagonal Lattice: Room Temperature Quantum Spin Hall Insulators

So far, several transition metal dichalcogenides (TMDCs) based two-dimensional (2D) topological insulators (TIs) have been discovered, all of them based on a tetragonal lattice. However, in 2D crystals, the hexagonal rather than the tetragonal symmetry is the most common motif. Here, based on first-principles calculations, we propose a new class of stable 2D TMDCs of composition MX2 (M=Mo, W, X=S, Se, Te) with a hexagonal lattice. They are all in the same stability range as other 2D TMDC allotropes that have been demonstrated experimentally, and they are identified to be practical 2D TIs with large band gaps ranging from 41 to 198 meV, making them suitable for applications at room-temperature. Besides, in contrast to tetragonal 2D TMDs, their hexagonal lattice will greatly facilitate the integration of theses novel TI states van-der-Waals crystals with other hexagonal or honeycomb materials, and thus provide a route for 2D-material-based devices for wider nanoelectronic and spintronic applications. The nontrivial band gaps of both WSe2 and WTe2 2D crystals are 198 meV, which are larger than that in any previously reported TMDC-based TIs. These large band gaps entirely stem from the strong spin-orbit coupling strength within the d orbitals of Mo/W atoms near the Fermi level. Our findings will significantly broaden the scientific and technological impact of both 2D TIs and TMDCs.

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