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Y. Sheng

Y. Sheng contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.soft

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preprint2015arXiv

Longitudinal Spin Seebeck Effect in Silver Strip on CoFe Film

We report the experimental observation of the spin Seebeck effect (SSE) in Ag/CoFe noble metal/magnetic metal bilayers with a longitudinal structure. Thermal voltages jointly generated by the anomalous Nernst effect (ANE) and the SSE were detected across the Ag/CoFe/Cu strip with a perpendicular thermal gradient. To effectively separate the SSE and the ANE part of the thermal voltages, we compared the experimental results between the Ag/CoFe/Cu strip and Cu/CoFe/Cu strip, where two samples processed with the heating power instead of the temperature difference through the thin CoFe film. The respective contributions of the ANE and SSE to thermal voltage were determined, and they have the ratio of 4:1. The spin current injected through CoFe/Ag interface is calculated to be 1.76 mA/W.

preprint2006arXiv

Hyperfine interaction and magnetoresistance in organic semiconductors

We explore the possibility that hyperfine interaction causes the recently discovered organic magnetoresistance (OMAR) effect. Our study employs both experiment and theoretical modelling. An excitonic pair mechanism model based on hyperfine interaction, previously suggested by others to explain magnetic field effects in organics, is examined. Whereas this model can explain a few key aspects of the experimental data, we, however, uncover several fundamental contradictions as well. By varying the injection efficiency for minority carriers in the devices, we show experimentally that OMAR is only weakly dependent on the ratio between excitons formed and carriers injected, likely excluding any excitonic effect as the origin of OMAR.

preprint2005arXiv

Large magnetoresistance in $π$-conjugated semiconductor thin film devices

Following the recent discovery of large magnetoresistance at room temperature in polyfluorence sandwich devices, we have performed a comprehensive magnetoresistance study on a set of organic semiconductor sandwich devices made from different pi-conjugated polymers and small molecules. The measurements were performed at different temperatures, ranging from 10K to 300K, and at magnetic fields, $B < 100mT$. We observed large negative or positive magnetoresistance (up to 10% at 300K and 10mT) depending on material and device operating conditions. We compare the results obtained in devices made from different materials with the goal of providing a comprehensive picture of the experimental data. We discuss our results in the framework of known magnetoresistance mechanisms and find that none of the existing models can explain our results.