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Researcher profile

Y. Nishioka

Y. Nishioka contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
astro-ph.IMastro-ph.HEphysics.plasm-ph

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Published work

2 published item(s)

preprint2022arXiv

High-power laser experiment forming a supercritical collisionless shock in a magnetized uniform plasma at rest

We present a new experimental method to generate quasi-perpendicular supercritical magnetized collisionless shocks. In our experiment, ambient nitrogen (N) plasma is at rest and well-magnetized, and it has uniform mass density. The plasma is pushed by laser-driven ablation aluminum (Al) plasma. Streaked optical pyrometry and spatially resolved laser collective Thomson scattering clarify structures of plasma density and temperatures, which are compared with one-dimensional particle-in-cell simulations. It is indicated that just after the laser irradiation, the Al plasma is magnetized by a self-generated Biermann battery field, and the plasma slaps the incident N plasma. The compressed external field in the N plasma reflects N ions, leading to counter-streaming magnetized N flows. Namely we identify the edge of the reflected N ions. Such interacting plasmas form a magnetized collisionless shock.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Sub-pixel Response of Double-SOI Pixel Sensors for X-ray Astronomy

We have been developing the X-ray silicon-on-insulator (SOI) pixel sensor called XRPIX for future astrophysical satellites. XRPIX is a monolithic active pixel sensor consisting of a high-resistivity Si sensor, thin SiO$_2$ insulator, and CMOS pixel circuits that utilize SOI technology. Since XRPIX is capable of event-driven readouts, it can achieve high timing resolution greater than $\sim 10{\rm ~μs}$, which enables low background observation by adopting the anti-coincidence technique. One of the major issues in the development of XRPIX is the electrical interference between the sensor layer and circuit layer, which causes nonuniform detection efficiency at the pixel boundaries. In order to reduce the interference, we introduce a Double-SOI (D-SOI) structure, in which a thin Si layer (middle Si) is added to the insulator layer of the SOI structure. In this structure, the middle Si layer works as an electrical shield to decouple the sensor layer and circuit layer. We measured the detector response of the XRPIX with D-SOI structure at KEK. We irradiated the X-ray beam collimated with $4{\rm ~μmϕ}$ pinhole, and scanned the device with $6{\rm ~μm}$ pitch, which is 1/6 of the pixel size. In this paper, we present the improvement in the uniformity of the detection efficiency in D-SOI sensors, and discuss the detailed X-ray response and its physical origins.

0 citations0 reviewsNo code linkedOpen access