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Y. M. Min

Y. M. Min appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

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Published work

3 published item(s)

preprint2016arXiv

Continuous-Time Quantum Walk on Penrose Lattice

In this paper, we study the quantum walk on the 2D Penrose Lattice, which is intermediate between periodic and disordered structure. Quantum walk on Penrose Lattice is less efficient in transport comparing to the regular lattices. By calculating the final remaining probability on the initial nodes and estimating the low bound. Our results show that the broken of translational symmetry induces both the localized states and degeneracy of eigenstates at $E=0$, this two differences from regular lattices influence efficiency of quantum walk. Also, we observe the transition from inefficient to efficient transport after introducing the near hopping terms, which suggests that we can adjust the "hopping strength" and achieve a "phase transition" progress.

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preprint2016arXiv

Electronic Structure and Optical Properties of Monolayer $ReS_2$ with Defect Controlled by Strain Engineering

By using first-principles calculations, we investigated the monolayer $ReS_2$ with vacancies under strain engineering, specifically focusing on its energy of formation, band gap, electron density of states, effective mass and optical properties. The calculated results disclose that S4 defect is more likely to form than other kinds of vacancies. Asymmetric deformation induced by strain makes its band structure transformation from direct band gap to indirect band gap. The analysis of the partial density of states indicates that the Re-d, Re-p and S-d orbitals are the major components of the defect states, being different from $MoS_2$, the defect states locate both above and below the Fermi level. Moreover, the effective mass was sensitive and anisotropic under the external strain. The reflection spectrum can be greatly tuned by the external strains, which indicates that the ReS2 monolayer has promising applications in nanoscale strain sensor and conductance-switch FETs.

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preprint2016arXiv

Regulation of oxygen vacancy types on SnO2 (110) surface by external strain

In tin dioxide nanostructures, oxygen vacancies (OVs) play an important role in their optical properties and thus regulation of both OV concentration and type via external strain is crucial to exploration of more applications. First-principle calculations of SnO2 (110) surface disclose that asymmetric deformations induced by external strain not only lead to its intrinsic surface elastic changes, but also result in different OV formation energy. In the absence of external strain, the energetically favorable oxygen vacancies (EFOV) appear in the bridging site of second layer. When -3.5% external strain is applied along y direction, the EFOV moves into plane site. This can be ascribed that the compressed deformation gives rise to redistribution of electronic wave function near OVs, therefore, formation of newly bond structures. Our results suggest that different type OVs in SnO2 surface can be controlled by strain engineering.

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