Researcher profile

Y. G. Pogorelov

Y. G. Pogorelov contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.dis-nn cond-mat.mtrl-sci cond-mat.supr-con

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preprint2015arXiv

Electric bias control on impurity effects in bigraphene

Formation of localized impurity levels within the band gap in bigraphene under applied electric field is considered and the conditions for their collectivization at finite impurity concentration are established. It is shown that a qualitative restructuring of quasiparticle spectrum within the initial band gap and then specific metal-insulator phase transitions are possible for such disordered system and can be effectively controlled by variation of the electric field bias at given impurity perturbation potential and concentration. Since these effects can be expected at low impurity concentrations but at not too low temperatures, they can be promising for practical applications in nanoelectronics devices.

preprint2011arXiv

Specifics of impurity effects in ferropnictide superconductors

Effects of impurities and disorder on quasiparticle spectrum in superconducting iron pnictides are considered. Possibility for occurrence of localized energy levels due to impurities within the superconducting gap and the related modification of band structure and of superconducting order parameter are discussed. The evolution of superconducting state with impurity doping is traced.

preprint2010arXiv

Transport Processes in Metal-Insulator Granular Layers

Tunnel transport processes are considered in a square lattice of metallic nanogranules embedded into insulating host to model tunnel conduction in real metal/insulator granular layers. Based on a simple model with three possible charging states ($\pm$, or 0) of a granule and three kinetic processes (creation or recombination of a $\pm$ pair, and charge transfer) between neighbor granules, the mean-field kinetic theory is developed. It describes the interplay between charging energy and temperature and between the applied electric field and the Coulomb fields by the non-compensated charge density. The resulting charge and current distributions are found to be essentially different in the free area (FA), between the metallic contacts, or in the contact areas (CA), beneath those contacts. Thus, the steady state dc transport is only compatible with zero charge density and ohmic resistivity in FA, but charge accumulation and non-ohmic behavior are \emph{necessary} for conduction over CA. The approximate analytic solutions are obtained for characteristic regimes (low or high charge density) of such conduction. The comparison is done with the measurement data on tunnel transport in related experimental systems.

preprint2008arXiv

Quantum effects for ballistic transport in spintronic devices

Recent fabrication of atomic precision nanodevices for spintronics greatly boosted their performance and also revealed new interesting features, as oscillating magnetoresistance with number of atomic layers in a multilayered structure. This motivates the need to go beyond the usual theoretical approach of semi-classical continuous layers. Here the simple tight-binding dynamics is used to describe quantum conduction in a multicomponent system with spin-polarized electrodes separated by an ultrathin and atomically coherent non-magnetic spacer (either metallic or insulating). A possibility is indicated for obtaining a huge resonant enhancement of magnetoresistance in such device by a special choice of gate voltage on the spacer element.