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Y. D. Jho

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cond-mat.mtrl-sci cond-mat.mes-hall physics.app-ph

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preprint2022arXiv

Nonlinear Photoelasticity to Explicate Acoustic Dephasing Dynamics

Detection and controlling of acoustic (AC) phonon phase have been strenuous tasks although such capability is crucial for further manipulating thermal properties. Here, we present a versatile formalism for tracing AC nanowaves with arbitrary strain compositions by incorporating the nonlinear photoelasticity (PE) into ultrafast acoustics where broad AC spectrum encompassing thermally important THz frequency range should be collected far beyond Brillouin frequency. The initial AC phase upon displacive carrier generation could be inherently varied depending on the bipolar AC compositions by implementing externally biased piezoelectric diodes. The importance of adopting nonlinear PE is then manifested from the transient phase shift either abrupt at the point of diffuse surface scattering or gradual during phonon-phonon or phonon-electron scattering events based on which the ratio of nonlinear to linear PE coefficient is experimentally extracted as a function of the detection probe energy, reaching 0.98 slightly below the bandgap. As the probing energy is rather set away from the bandgap, AC phase is completely invariant with any scattering events, exhibiting the conventional trend at Brillouin frequency in linear regime. Under potent influence of nonlinear PE, the AC dephasing time during the propagation are quantified as a function of AC wavepacket size and further correlated with intrinsic and extrinsic AC scattering mechanisms in electron reservoir.

preprint2015arXiv

External Modulation and Switching of Acoustic Phonons: Comparative Roles of Potential Distributions

Acoustic phonons can be coherently generated by ultrafast displacive screening of potential gradients, often enhanced by the strong built-in piezoelectric fields, in wurtzite semiconductors. In such structures, transverse symmetry within the c plane hinders both the generation and detection of the transverse acoustic (TA) modes, and only longitudinal acoustic (LA) mode is generated. We show that even for c-GaN, the application of asymmetric potential distributions in the c plane can break the symmetry and selection rules, thus switching on the normally forbidden TA mode. This is in contrast to the LA mode, the strength of which varies with the symmetric potential distributions. By comparing transient differential reflectivity spectra in structures with and without asymmetric potential distributions, the role of the electrically attained anisotropy was further revealed by the digitized appearance of the TA mode, in clear contrast to the monotonic LA mode, and by modulations in the propagation velocities, optical birefringence, and geometrically varying sensitivities, the underlying mechanisms of which are modeled by electric-field-dependent perturbations of the dielectric tensors, incorporating the results of elastic modulations.

preprint2014arXiv

Transverse Acoustic Phonon Transistor Based on Asymmetric Potential Distribution

We experimentally demonstrate a transverse acoustic (TA) phonon transistor. Phonons are coherently initiated by femtosecond photocarrier screening on potential gradients. Although translational symmetry within the isotropic plane normally prohibits optical generation of TA phonons, we show that the combined application of an external bias in the vertical and lateral directions can break the selection rules, generating the forbidden TA mode. The amplitude and on-state time of the TA mode can be modulated by the external field strength and size of the laterally biased region. The observed frequency shift with an external bias as well as the strong geometrical dependence confirm the role of the asymmetric potential distribution in electrically manipulating the crystal symmetry to control and activate the transistor.

preprint2003arXiv

Ultrafast spectroscopy of propagating coherent acoustic phonons in GaN/InGaN heterostructures

We show that large amplitude, coherent acoustic phonon wavepackets can be generated and detected in In$_x$Ga$_{1-x}$N/GaN epilayers and heterostructures in femtosecond pump-probe differential reflectivity experiments. The amplitude of the coherent phonon increases with increasing Indium fraction $x$ and unlike other coherent phonon oscillations, both \textit{amplitude} and \textit{period} are strong functions of the laser probe energy. The amplitude of the oscillation is substantially and almost instantaneously reduced when the wavepacket reaches a GaN-sapphire interface below the surface indicating that the phonon wavepackets are useful for imaging below the surface. A theoretical model is proposed which fits the experiments well and helps to deduce the strength of the phonon wavepackets. Our model shows that localized coherent phonon wavepackets are generated by the femtosecond pump laser in the epilayer near the surface. The wavepackets then propagate through a GaN layer changing the local index of refraction, primarily through the Franz-Keldysh effect, and as a result, modulate the reflectivity of the probe beam. Our model correctly predicts the experimental dependence on probe-wavelength as well as epilayer thickness.