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Researcher profile

Y. A. Genenko

Y. A. Genenko contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.supr-con

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Published work

6 published item(s)

preprint2016arXiv

Fatigue effect on polarization switching dynamics in polycrystalline bulk ferroelectrics

Statistical distribution of switching times is a key information necessary to describe the dynamic response of a polycrystalline bulk ferroelectric to an applied electric field. The Inhomogeneous Field Mechanism (IFM) model offers a useful tool which allows extraction of this information from polarization switching measurements over a large time window. In this paper, the model was further developed to account for the presence of non-switchable regions in fatigued materials. Application of the IFM- analysis to bipolar electric cycling induced fatigue process of various lead-based and lead-free ferroelectric ceramics reveals different scenarios of property degradation. Insight is gained into different underlying fatigue mechanisms inherent to the investigated systems.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Finite-element simulations of hysteretic ac losses in a magnetically coated superconducting tubular wire subject to an oscillating transverse magnetic field

Numerical simulations of hysteretic ac losses in a tubular superconductor/paramagnet heterostructure subject to an oscillating transverse magnetic field are performed within the quasistatic approach, calling upon the COMSOL finite-element software package and exploiting magnetostatic-electrostatic analogues. It is shown that one-sided magnetic shielding of a thin, type-II superconducting tube by a coaxial paramagnetic support results in a slight increase of hysteretic ac losses as compared to those for a vacuum environment, when the support is placed inside; a spectacular shielding effect with a possible reduction of hysteretic ac losses by orders of magnitude, however, ensues, depending on the magnetic permeability and the amplitude of the applied magnetic field, when the support is placed outside.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Macro- and microscopic properties of strontium doped indium oxide

Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were investigated for materials with different doping levels at different temperatures (T=20-300 C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x=10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn2O4. An unusual property of high level (x=10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100-200 C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electro-diffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3x10^(-13) cm^2/s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Magnetic cloaking by a paramagnet/superconductor cylindrical tube in the critical state

Cloaking of static magnetic fields by a finite thickness type-II superconductor tube being in the full critical state and surrounded by a coaxial paramagnet shell is studied. On the basis of exact solutions to the Maxwell equations, it is shown that, additionally to previous studies assuming the Meissner state of the superconductor constituent, perfect cloaking is still realizable at fields higher than the field of full flux penetration into the superconductor and for arbitrary geometrical parameters of both constituents. It is also proven that simultaneously the structure is fully undetectable under the cloaking conditions. Differently from the case of the Meissner state the cloaking properties in the application relevant critical state are realized, however, only at a certain field magnitude.

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preprint2014arXiv

Magnetic detectability of a finite size paramagnet/superconductor cylindrical cloak

Cloaking of static magnetic fields by a finite thickness type-II superconductor tube surrounded by a coaxial paramagnet shell is studied. On the basis of exact solutions to the London and Maxwell equations, it is shown that perfect cloaking is realizable for arbitrary geometrical parameters including the thin film case for both constituents. In contrast to previous approximate studies assuming perfect diamagnetism of the superconductor constituent, it is proven that cloaking provides simultaneously full undetectability, that is the magnetic moment of the structure completely vanishes as well as all high-order multipole moments as soon as the uniform field outside remains unaffected.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Self consistent theory of unipolar charge-carrier injection in metal/insulator/metal systems

A consistent device model to describe current-voltage characteristics of metal/insulator/metal systems is developed. In this model the insulator and the metal electrodes are described within the same theoretical framework by using density of states distributions. This approach leads to differential equations for the electric field which have to be solved in a self consistent manner by considering the continuity of the electric displacement and the electrochemical potential in the complete system. The model is capable of describing the current-voltage characteristics of the metal/insulator/metal system in forward and reverse bias for arbitrary values of the metal/ insulator injection barriers. In the case of high injection barriers, approximations are provided offering a tool for comparison with experiments. Numerical calculations are performed exemplary using a simplified model of an organic semiconductor.

0 citations0 reviewsNo code linkedOpen access