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Xunwang Yan

Xunwang Yan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2015arXiv

Geometrical and electronic structures of tripotassium-doped hydrocarbon superconductors: Density functional calculations

A systemically theoretical study has been presented to explored the crystal structures and electronic characteristics of polycyclic aromatic hydrocarbons (PAHs), such as solid phenanthrene, picene, 1,2;8,9-dibenzopentacene, and 7-phenacenes, since these PAHs exhibited the superconductivity when potassium doping into. For tripotassium-doped phenanthrene and picene, we demonstrate the K atomic positions to fit the experimental lattice parameters, and analyze the distinction between the stablest configuration and the fitted experimental one. Based on the first-principles calculations, for the first time, we predict the possible crystal configurations of pristine and tripotassium-doped 1,2;8,9-dibenzopentacene and 7-phenacenes, respectively. For these four PAHs, the electronic structures after doping are investigated in details. The results show that the electronic characters near the Fermi level are high sensitive to structure. Because of the change of the benzene rings arrangement, the 1,2;8,9-dibenzopentacene exhibits visibly different band structures from other three PAHs. In these metallic PAHs, two bands cross the Fermi level which results in the complicated multiband feature of Fermi surfaces. Fascinatingly, we find that the electronic states of potassium contribute to the Fermi surfaces especially for K-3$d$ electrons, which improves a way to understand this superconductivity. As a result, we suggest that the rigid-band picture is invalidated due to the hybridization between K atoms and PAH molecules as well as the rearrangement and distortion of PAH molecules.

preprint2012arXiv

Electronic structure and optical properties of Graphene Monoxide

The electronic and optical properties of graphene monoxide, a new type of semiconductor materials, are first theoretically studied based on density functional theory. Electronic calculations show that the band gap is 0.952 eV which indicate that graphene monoxide is a direct band gap semiconductor. The density of states of graphene monoxide and the partial density of states for C and O are given to understand the electronic structure. In addition, we calculate the optical properties of graphene monoxide including the complex dielectric function, absorption coefficient, the complex refractive index, loss-function, reflectivity and conductivity. These results provide a physical basis for the potential applications in optoelectronic devices.