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Xuejian Ma

Xuejian Ma contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Observation of Gigahertz Topological Valley Hall Effect in Nanoelectromechanical Phononic Crystals

Topological phononics offers numerous opportunities in manipulating elastic waves that can propagate in solids without being backscattered. Due to the lack of nanoscale imaging tools that aid the system design, however, acoustic topological metamaterials have been mostly demonstrated in macroscale systems operating at low (kilohertz to megahertz) frequencies. Here, we report the realization of gigahertz topological valley Hall effect in nanoelectromechanical AlN membranes. Propagation of elastic wave through phononic crystals is directly visualized by microwave microscopy with unprecedented sensitivity and spatial resolution. The valley Hall edge states, protected by band topology, are vividly seen in both real- and momentum-space. The robust valley-polarized transport is evident from the wave transmission across local disorder and around sharp corners, as well as the power distribution into multiple edge channels. Our work paves the way to exploit topological physics in integrated acousto-electronic systems for classical and quantum information processing in the microwave regime.

preprint2020arXiv

Unveiling Defect-Mediated Carrier Dynamics in Monolayer Semiconductors by Spatiotemporal Microwave Imaging

The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects can lead to an enhanced photoconduction, a complicated process involving charge generation and recombination in the time domain and carrier transport in the spatial domain. Here, we report the simultaneous spatial and temporal photoconductivity imaging in two types of WS2 monolayers by laser-illuminated microwave impedance microscopy. The diffusion length and carrier lifetime were directly extracted from the spatial profile and temporal relaxation of microwave signals respectively. Time-resolved experiments indicate that the critical process for photo-excited carriers is the escape of holes from trap states, which prolongs the apparent lifetime of mobile electrons in the conduction band. As a result, counterintuitively, the photoconductivity is stronger in CVD samples than exfoliated monolayers with a lower defect density. Our work reveals the intrinsic time and length scales of electrical response to photo-excitation in van der Waals materials, which is essential for their applications in novel optoelectronic devices.