Researcher profile

Xinlu Li

Xinlu Li contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Frequency Fitness Assignment: Optimization without Bias for Good Solutions can be Efficient

A fitness assignment process transforms the features (such as the objective value) of a candidate solution to a scalar fitness, which then is the basis for selection. Under Frequency Fitness Assignment (FFA), the fitness corresponding to an objective value is its encounter frequency in selection steps and is subject to minimization. FFA creates algorithms that are not biased towards better solutions and are invariant under all injective transformations of the objective function value. We investigate the impact of FFA on the performance of two theory-inspired, state-of-the-art EAs, the Greedy (2+1) GA and the Self-Adjusting (1+(lambda,lambda)) GA. FFA improves their performance significantly on some problems that are hard for them. In our experiments, one FFA-based algorithm exhibited mean runtimes that appear to be polynomial on the theory-based benchmark problems in our study, including traps, jumps, and plateaus. We propose two hybrid approaches that use both direct and FFA-based optimization and find that they perform well. All FFA-based algorithms also perform better on satisfiability problems than any of the pure algorithm variants.

preprint2022arXiv

Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions

Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order parameter, known as the Néel vector, by electric means is critical to realize concepts of AFM spintronics. Here, we demonstrate that non-collinear AFM metals, such as Mn3Sn, exhibit a momentum dependent spin polarization which can be exploited in AFM tunnel junctions to detect the Néel vector. Using first-principles calculations based on density functional theory, we predict a tunneling magnetoresistance (TMR) effect as high as 300% in AFM tunnel junctions with Mn3Sn electrodes, where the junction resistance depends on the relative orientation of their Néel vectors and exhibits four non-volatile resistance states. We argue that the spin-split band structure and the related TMR effect can also be realized in other non-collinear AFM metals like Mn3Ge, Mn3Ga, Mn3Pt, and Mn3GaN. Our work provides a robust method for detecting the Néel vector in non-collinear antiferromagnets via the TMR effect, which may be useful for their application in AFM spintronic devices.