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XinHang Luo

XinHang Luo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2021arXiv

Measuring the rogue wave pattern triggered from Gaussian perturbations by deep learning

Weak Gaussian perturbations on a plane wave background could trigger lots of rogue waves, due to modulational instability. Numerical simulations showed that these rogue waves seemed to have similar unit structure. However, to the best of our knowledge, there is no relative result to prove that these rogue waves have the similar patterns for different perturbations, partly due to that it is hard to measure the rogue wave pattern automatically. In this work, we address these problems from the perspective of computer vision via using deep neural networks. We propose a Rogue Wave Detection Network (RWD-Net) model to automatically and accurately detect RWs on the images, which directly indicates they have the similar computer vision patterns. For this purpose, we herein meanwhile have designed the related dataset, termed as Rogue Wave Dataset-$10$K (RWD-$10$K), which has $10,191$ RW images with bounding box annotations for each RW unit. In our detection experiments, we get $99.29\%$ average precision on the test splits of the RWD-$10$K dataset. Finally, we derive our novel metric, the density of RW units (DRW), to characterize the evolution of Gaussian perturbations and obtain the statistical results on them.

preprint2013arXiv

Low frequency noise in chemical vapor deposited MoS2

Inherent low frequency noise is a ubiquitous phenomenon, which limits operation and performance of electronic devices and circuits. This limiting factor is very important for nanoscale electronic devices, such as 2D semiconductor devices. In this work, low frequency noise in high mobility single crystal MoS2 grown by chemical vapor deposition (CVD) is investigated. The measured low frequency noise follows an empirical formulation of mobility fluctuations with Hooge' s parameter ranging between 1.44E-3 and 3.51E-2. Small variation of Hooge's parameter suggests superior material uniformity and processing control of CVD grown MoS2 devices than reported single-layer MoS2 FET. The extracted Hooge's parameter is one order of magnitude lower than CVD grown graphene. The Hooge's parameter shows an inverse relationship with the field mobility.