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Xingyue Peng

Xingyue Peng appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2016arXiv

Spin Generation Via Bulk Spin Current in Three Dimensional Topological Insulators

To date, spin generation in three-dimensional topological insulators is primarily modeled as a single-surface phenomenon, attributed to the momentum-spin locking on each individual surface. In this article we propose a mechanism of spin generation where the role of the insulating yet topologically non-trivial bulk becomes explicit: an external electric field creates a transverse pure spin current through the bulk of a three-dimensional topological insulator, which transports spins between the top and bottom surfaces. Under sufficiently high surface disorder, the spin relaxation time can be extended via the Dyakonov-Perel mechanism. Consequently both the spin generation efficiency and surface conductivity are largely enhanced. Numerical simulation confirms that this spin generation mechanism originates from the unique topological connection of the top and bottom surfaces and is absent in other two dimensional systems such as graphene, even though they possess a similar Dirac cone-type dispersion.

preprint2015arXiv

Gate-tunable superconducting quantum interference devices of PbS nanowires

We report on the fabrication and electrical transport properties of gate-tunable superconducting quantum interference devices (SQUIDs), made of semiconducting PbS nanowire contacted with PbIn superconducting electrodes. Applied with a magnetic field perpendicular to the plane of the nano-hybrid SQUID, periodic oscillations of the critical current due to the flux quantization in SQUID are observed up to T = 4.0 K. Nonsinusoidal current-phase relationship is obtained as a function of temperature and gate voltage, which is consistent with a short and diffusive junction model.

preprint2015arXiv

Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory

We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10^5. The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength dependent photoconductance measurements. Scanning photocurrent microscopy excludes the possibility that NPC originates from the NW/metal contacts and reveals a competing positive photoconductivity. The conductivity recovery after illumination substantially slows down at low temperature, indicating a thermally activated detrapping mechanism. At 78 K, the spontaneous recovery of the conductance is completely quenched, resulting in a reversible memory device which can be switched by light and gate voltage pulses. The novel NPC based optoelectronics may find exciting applications in photodetection and nonvolatile memory with low power consumption.