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Researcher profile

Xieyu Zhou

Xieyu Zhou contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

4 published item(s)

preprint2022arXiv

Strain Effect on Air-Stability of Monolayer CrSe2

The discovery of two dimensional (2D) magnetic materials has brought great research value for spintronics and data storage devices. However, their air-stability as well as the oxidation mechanism has not been unveiled, which limits their further applications. Here, by first-principles calculations, we carried out a detailed study on the oxidation process of monolayer CrSe2 and biaxial tensile strain effect. We found dissociation process of O2 on pristine CrSe2 sheet is an endothermic reaction with a reaction energy barrier of 0.53 eV, indicating its thermodynamics stability. However, such a process becomes exothermic under a biaxial tensile strain reaching 1%, accompanying with a decreased reaction barrier, leading to reduced stability. These results manifest that in-plane strain plays a significant role in modifying air-stability in CrSe2 and shed considerable light on searching appropriate substrate to stabilize 2D magnetic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Bethe-Slater-curve-like behavior and interlayer spin-exchange coupling mechanisms in two-dimensional magnetic bilayers

Layered magnets have recently received tremendous attention, however, spin-exchange coupling mechanism across their interlayer regions is yet to be revealed. Here, we report a Bethe-Slater-curve (BSC) like behavior in nine transition metal dichalcogenide bilayers (MX2, M=V, Cr, Mn; X=S, Se, Te) and established interlayer spin-exchange coupling mechanisms at their van der Waals gaps using first-principle calculations. The BSC-like behavior offers a distance-dependent interlayer anti-ferromagnetic (AFM) to ferromagnetic (FM) transition. This phenomenon is explained with the spin-exchange coupling mechanisms established using bilayer CrSe2 as a prototype in this work. The Se pz wavefunctions from two adjacent interfacial Se sublayers overlap at the interlayer region. The spin alignment of the region determines interlayer magnetic coupling. At a shorter interlayer distance, Pauli repulsion at the overlapped region dominates and thus favors anti-parallel oriented spins leading to interlayer AFM. For a longer distance, kinetic energy gain of polarized electrons across the bilayer balances the Pauli repulsion and the bilayer thus prefers an interlayer FM state. In light of this, the AFM-FM transition is a result of competition between Pauli and Coulomb repulsion and kinetic energy gain. All these results open a new route to tune interlayer magnetism and the revealed spin-exchange coupling mechanisms are paramount additions to those previously established ones.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Direct Measurement of the Electronic Structure and band gap nature of atomic-layer-thick 2H-MoTe2

The millimeter sized monolayer and bilayer 2H-MoTe2 single crystal samples are prepared by a new mechanical exfoliation method. Based on such high-quality samples, we report the first direct electronic structure study on them, using standard high resolution angle-resolved photoemission spectroscopy (ARPES). A direct band gap of 0.924eV is found at K in the rubidium-doped monolayer MoTe2. Similar valence band alignment is also observed in bilayer MoTe2,supporting an assumption of a analogous direct gap semiconductor on it. Our measurements indicate a rather large band splitting of 212meV at the valence band maximum (VBM) in monolayer MoTe2, and the splitting is systematically enlarged with layer stacking, from monolayer to bilayer and to bulk. Meanwhile, our PBE band calculation on these materials show excellent agreement with ARPES results. Some fundamental electronic parameters are derived from the experimental and calculated electronic structures. Our findings lay a foundation for further application-related study on monolayer and bilayer MoTe2.

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preprint2019arXiv

Phase-controllable growth of ultrathin 2D magnetic FeTe crystals

Two-dimensional (2D) magnets with intrinsic ferromagnetic/antiferromagnetic (FM/AFM) ordering are highly desirable for future spintronics devices. However, the synthesis of 2D magnetic crystals, especially the direct growth on SiO2/Si substrate, is just in its infancy. Here, we report a chemical vapor deposition (CVD)-based rational growth approach for the synthesis of ultrathin FeTe crystals with controlled structural and magnetic phases. By precisely optimizing the growth temperature (Tgrowth), FeTe nanoplates with either layered tetragonal or non-layered hexagonal phase can be controlled with high-quality. The two controllable phases lead to square and triangular morphologies with a thickness down to 3.6 and 2.8 nm, respectively. More importantly, transport measurements reveal that tetragonal FeTe is antiferromagnetic with a Neel temperature (TN) about 71.8 K, while hexagonal FeTe is ferromagnetic with a Curie temperature (TC) around 220 K. Theoretical calculations indicate that the ferromagnetic order in hexagonal FeTe is originated from a concomitant lattice distortion and the spin-lattice coupling. This study represents a major step forward in the CVD growth of 2D magnetic materials on SiO2/Si substrates and highlights on their potential applications in the future spintronic devices.

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