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Xiaotian Yang

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Published work

5 published item(s)

preprint2026arXiv

InfiniteVGGT: Visual Geometry Grounded Transformer for Endless Streams

The grand vision of enabling persistent, large-scale 3D visual geometry understanding is shackled by the irreconcilable demands of scalability and long-term stability. While offline models like VGGT achieve inspiring geometry capability, their batch-based nature renders them irrelevant for live systems. Streaming architectures, though the intended solution for live operation, have proven inadequate. Existing methods either fail to support truly infinite-horizon inputs or suffer from catastrophic drift over long sequences. We shatter this long-standing dilemma with InfiniteVGGT, a causal visual geometry transformer that operationalizes the concept of a rolling memory through a bounded yet adaptive and perpetually expressive KV cache. Capitalizing on this, we devise a training-free, attention-agnostic pruning strategy that intelligently discards obsolete information, effectively ``rolling'' the memory forward with each new frame. Fully compatible with FlashAttention, InfiniteVGGT finally alleviates the compromise, enabling infinite-horizon streaming while outperforming existing streaming methods in long-term stability. The ultimate test for such a system is its performance over a truly infinite horizon, a capability that has been impossible to rigorously validate due to the lack of extremely long-term, continuous benchmarks. To address this critical gap, we introduce the Long3D benchmark, which, for the first time, enables a rigorous evaluation of continuous 3D geometry estimation on sequences about 10,000 frames. This provides the definitive evaluation platform for future research in long-term 3D geometry understanding. Code is available at: https://github.com/AutoLab-SAI-SJTU/InfiniteVGGT

preprint2025arXiv

Tailoring Neel orders in Layered Topological Antiferromagnets

In the two-dimensional limit, the interplay between Neel order and band topology in van der Waals topological antiferromagnets can give rise to novel quantum phenomena in the quantum anomalous Hall state, including the cascaded quantum phase transition and spin-modulation effect. However, due to the absence of net magnetization in antiferromagnets, probing the energetically degenerate Neel orders has long remained a significant challenge. Inspired by recent advances in realizing the quantum anomalous Hall effect in AlOx-capped layered topological antiferromagnet MnBi2Te4, we demonstrate deterministic control over the Neel order through surface anisotropy engineering enabled by the AlOx capping layer. By tuning the surface anisotropy, we uncover paritydependent symmetry breaking states that manifest as distinct odd-even boundary architectures, including 180 degree domain walls or continuous spin structures. Comparative studies between AlOx-capped and pristine odd-layer MnBi2Te4 flakes using domain-resolved magnetic force microscopy reveal pronounced differences in coercivity and magnetization-reversal dynamics. Notably, an unconventional giant exchange bias, which arises from perpendicular magnetic anisotropy rather than traditional interface pinning mechanisms, is observed for the first time. Our findings establish a pathway for manipulating Neel order through surface modification in A-type antiferromagnets, offering new opportunities for spintronic devices and quantum information technologies.

preprint2022arXiv

Electronic properties and quantum transports in functionalized graphene Sierpinski carpet fractals

Recent progress in controllable functionalization of graphene surfaces enables the experimental realization of complex functionalized graphene nanostructures, such as Sierpinski carpet (SC) fractals. Herein, we model the SC fractals formed by hydrogen and fluorine functionalized patterns on graphene surfaces, namely, H-SC and F-SC, respectively. We then reveal their electronic properties and quantum transport features. From calculated results of the total and local density of state, we find that states in H-SC and F-SC have two characteristics: (i) low-energy states inside about |E/t|<1 (with t as the near-neighbor hopping) are localized inside free graphene regions due to the insulating properties of functionalized graphene regions, and (ii) high-energy states in F-SC have two special energy ranges including -2.3<E/t<-1.9 with localized holes only inside free graphene areas and 3<E/t<3.7 with localized electrons only inside fluorinated graphene areas. The two characteristics are further verified by the real-space distributions of normalized probability density. We analyze the fractal dimension of their quantum conductance spectra and find that conductance fluctuations in these structures follow the Hausdorff dimension. We calculate their optical conductivity and find that several additional conductivity peaks appear in high energy ranges due to the adsorbed H or F atoms.

preprint2022arXiv

Transport through Quantum Anomalous Hall Bilayers with Lattice Mismatch

We theoretically investigate quantum transport properties of quantum anomalous Hall bilayers, with arbitrary ratio of lattice constants, i.e., with lattice mismatch. In the simplest case of ratio 1 (but with different model parameters in two layers), the inter-layer coupling results in resonant traversing between forward propagating waves in two layers. In the case of generic ratios, there is a quantized conductance plateau originated from two Chern numbers associated with two layers. However, the phase boundary of this quantization plateau consists of a fractal transitional region (instead of a clear transition line) of interpenetrating edge states (with quantized conductance) and bulk states (with unquantized conductance). We attribute these bulk states as mismatch induced in-gap bulk states. Different from in-gap localized states induced by random disorder, these in-gap bulk states are extended in the limit of vanishing random disorder. However, the detailed fine structure of this transitional region is sensitive to disorder, lattice structure, sample size, and even the configuration of leads connecting to it, due to the bulk and topologically trivial nature of these in-gap bulk states.

preprint2012arXiv

Novel Photovoltaic Phenomenon in Manganite/ZnO Heterostructure

In this paper, we report a novel photovoltaic phenomenon in a low cost manganite/ZnO p-n heterojunction grown on ITO glass substrate by pulsed laser depositon (PLD) under relative low growth temperature. The heterostructure ITO/La0.62Ca0.29K0.09MnO3(LCKMO)/ZnO/Al exhibits reproducible rectifying characteristics and consists of four parts: aluminum top electrode, ITO bottom electrode, manganite and ZnO semiconductor films. Moreover, the light current can generate under continuous laser (λ=325nm) irradiation. In this article, we investigate the influence of manganite and ZnO film thickness on the electrical and photoelectric characteristics of the heterostructure at room temperature. The maximum power conversion efficiency (PCE) is achieved not only when the LCKMO and ZnO layer is thin enough, but also when the full space charge layer is sufficient. We obtain the maximum value(0.0145%) of PCE when the thickness of LCKMO and ZnO layer is 25nm and 150nm, respectively. Under this condition, the open circuit voltage is 0.04V, which can be attributed to internal photoemission.