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Xiaoning Zang

Xiaoning Zang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2020arXiv

Second-order topological insulator and fragile topology in topological circuitry simulation

Second-order topological insulators (SOTIs) are the topological phases of matter in d dimensions that manifest (d-2)-dimensional localized modes at the intersection of the edges. We show that SOTIs can be designed via stacked Chern insulators with opposite chiralities connected by interlayer coupling. To characterize the bulk-corner correspondence, we establish a Jacobian-transformed nested Wilson loop method and an edge theory that are applicable to a wider class of higher-order topological systems. The corresponding topological invariant admits a filling anomaly of the corner modes with fractional charges. The system manifests a fragile topological phase characterized by the absence of a Wannier gap in the Wilson loop spectrum. Furthermore, we argue that the proposed approach can be generalized to multilayers. Our work offers perspectives for exploring and understanding higher-order topological phenomena.

preprint2019arXiv

Identification and Resolution of Unphysical Multielectron Excitations in the Real-Time Time-Dependent Kohn-Sham Formulation

We resolve a fundamental issue associated with the conventional Kohn-Sham formulation of real-time time-dependent density functional theory. We show that unphysical multielectron excitations, generated during time propagation of the Kohn-Sham equations due to fixation of the total number of Kohn-Sham orbitals and their occupations, result in incorrect electron density and, therefore, wrong predictions of physical properties. A new formulation is proposed in that the number of Kohn-Sham orbitals and their occupations are updated on the fly, the unphysical multielectron excitations are removed, and the correct electron density is determined. The correctness of the new formulation is demonstrated by simulations of Rabi oscillation, as analytical results are available for comparison in the case of noninteracting electrons.

preprint2015arXiv

Designing Small Silicon Quantum Dots with Low Reorganization Energy

A first principles, excited state analysis is carried out to identify ways of producing silicon quantum dots with low excitonic reorganization energy. These focus on the general strategy of either reducing or constraining exciton-phonon coupling, and four approaches are explored. The results can be implemented in quantum dot solids to mitigate polaronic effects and increase the lifetime of coherent excitonic superpositions. It is demonstrated that such designs can also be used to alter the shape of the spectral density for reorganization so as to reduce the rates of both decoherence and dissipation. The results suggest that it may be possible to design quantum dot solids that support partially coherent exciton transport.