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Researcher profile

Xiaojun Hu

Xiaojun Hu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciComputer Visionphysics.comp-ph

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Published work

6 published item(s)

preprint2026arXiv

VideoMemory: Toward Consistent Video Generation via Memory Integration

Maintaining consistent characters, props, and environments across multiple shots is a central challenge in narrative video generation. Existing models can produce high-quality short clips but often fail to preserve entity identity and appearance when scenes change or when entities reappear after long temporal gaps. We present VideoMemory, an entity-centric framework that integrates narrative planning with visual generation through a Dynamic Memory Bank. Given a structured script, a multi-agent system decomposes the narrative into shots, retrieves entity representations from memory, and synthesizes keyframes and videos conditioned on these retrieved states. The Dynamic Memory Bank stores explicit visual and semantic descriptors for characters, props, and backgrounds, and is updated after each shot to reflect story-driven changes while preserving identity. This retrieval-update mechanism enables consistent portrayal of entities across distant shots and supports coherent long-form generation. To evaluate this setting, we construct a 54-case multi-shot consistency benchmark covering character-, prop-, and background-persistent scenarios. Extensive experiments show that VideoMemory achieves strong entity-level coherence and high perceptual quality across diverse narrative sequences.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Chemically induced graphene to diamond transition: a DFT study

The conversion of graphene into diamond is a new way for preparing ultrathin diamond film without pressure. Herein, we investigated the transformation mechanism of surface-hydrogenated bilayer graphene (SHBG) into surface-hydrogenated single-layer diamond (SHSLD) crystal, inserting fifteen kinds of single metal atoms without any pressure, by using the systematical first-principles calculations. Compared with the configuration without metal atom, SHBG can be transformed into SHSLD spontaneously in thermodynamics under the action of single metal atom, and its formation energy can even decrease from 0.82 eV to -5.79 eV under the action of Hf atom. According to our results, the outer electron orbits and atomic radius of metal atom are two important factors that affect the conversion. For the phase transition to occur, the metal atom needs to have enough empty d orbitals, and the radius of the metal atom is in the range of 0.136-0.159 nm. Through further analysis, we find that the p orbitals of carbon atoms and d orbital of metal atom in SHBG will be strongly hybridized, thereby promoting the conversion. The results supply important significance to experimentally prepare diamond without pressure through hydrogenated graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Two-dimensional Boron Monosulfides: Semiconducting and Metallic Polymorphs

The typical two-dimensional semiconductors, group \uppercase\expandafter{\romannumeral3A} chalcogenides, have garnered tremendous interest for their outstanding electronic, mechanical, and chemical properties. However, so far, there have been almost no reports on boron monosulfides (BS) binary material. Here, four two-dimensional BS sheets, namely the $α$-, $β$-, $γ$-, and $δ$-BS sheets, are proposed and discussed from $\emph{ab initio}$ calculations. State-of-the-art first-principles calculations reveal all these structures are thermally and dynamically stable, indicating the potential for successful experimental synthesis. Especially, for $α$-BS, it has a calculated exfoliation energy of 0.96 J m$^{-2}$, suggesting the preparation of $α$-BS is feasible by the exfoliation of bulk rhombohedral-BS. Our results show that $α$-, $β$-, $γ$-BS are semiconductors, whereas $δ$-BS is a metallic system. Remarkably, our calculations indicate that $δ$-BS is a superconductor with a large electron-phonon coupling ($λ$ = 1.51) leading a high superconducting critical temperature ($T_c$ $\approx $ 21.56 K), which is the first report of intrinsic superconducting property among all two-dimensional group \uppercase\expandafter{\romannumeral3A} chalcogenides. The desired mechanical and electronic properties render the BS sheets as the promising two-dimensional materials for future applications in nanoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Two-dimensional Iron Monocarbide with Planar Hypercoordinate Iron and Carbon

We report on the theoretical discovery of Iron monocarbide binary sheets stabilized at two-dimensional confined space, which we call tetragonal-FeC (t-FeC) and orthorhombic-FeC (o-FeC), respectively. From the energy viewpoint, the proposed t-FeC is the global minimum configuration in the 2D space, and each carbon atom is four-coordinated with ambient four Iron atoms. Strikingly, the o-FeC monolayer is an orthorhombic phase with planar pentacoordinate carbon moiety and planar seven-coordinate Fe moiety. To our knowledge, this monolayer is the first example of a simultaneously pentacoordinate carbon and planar seven-coordinate Fe-containing material. State-of-the-art theoretical calculations confirm that all these monolayers have significantly dynamic, mechanical, and thermal stabilities. Among these two monolayers, t-FeC monolayer shows a higher theoretical capacity (395 mAh g-1 ), and can stably adsorb Li up to t-FeCLi3 . Low migration energy barrier is predicted as small as 0.26 eV for Li, which result in the fast diffusion of Li atom on this monolayer. Moreover, electron-phonon calculations coupled with Bardeen-Cooper-Schrieffer arguments suggest t-FeC can be potential two-dimensional superconductors with 6.77 K superconducting transition temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

D-carbon: A New sp3 Carbon Allotrope

We have investigated the structural, mechanical and electronic properties of D-carbon by ab initio calculations, a new phase of crystalline sp3 carbon (pace group D2h5, Pmma-orthorhombic). Total-energy calculations demonstrate that D-carbon is energetically more favorable than previously proposed T6 structure. State-of-the-art theoretical calculations show that this new phase is dynamic, mechanical, and thermal stable at zero pressure, and more stable than graphite beyond 63.7 GPa. Importantly, the calculations reveal that D-carbon possesses high Vickers hardness (86.58 GPa) and bulk modulus (369 GPa), which are comparable to diamond. D-carbon is a semiconductor with a band gap of 4.33 eV, lower than diamond's gap (5.47 eV). The simulated X-ray diffraction pattern is in satisfactory agreement with the previously experimental data in chimney or detonation soot, suggesting its possible presence in the specimen. Equally important, the possible transition path from diamond to D-carbon has been investigated, indicating a possible approach to synthesize this new phase.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Novel bonding patterns and optoelectronic properties of the two-dimensional Si$_x$C$_y$ monolayers

The search of new two-dimensional (2D) materials with novel optical and electronic properties is always desirable for material development. Here, we report a comprehensive theoretical prediction of 2D SiC compounds with different stoichiometries from C-rich to Si-rich. Besides the previously known hexagonal SiC sheet, we identified two types of hitherto-unknown structural motifs with distinctive bonding features. The first type of 2D SiC monolayer, including t-SiC and t-Si$_2$C sheet, can be described by tetragonal lattice. Among them,t-SiC monolayer sheet is featured by each carbon atom binds with four neighboring silicon atoms in almost the same plane, constituting a quasi-planar four-coordinated rectangular moiety. More interestingly, our calculations demonstrate that this structure exhibits a strain-dependent insulator-semimetal transition, suggesting promising applications in strain-dependent optoelectronic sensors. The second type of 2D SiC sheet is featured by silagraphyne with acetylenic linkages(-C$\equiv$C-). Silagraphyne shows both high pore sizes and Poisson's ratio. These properties make them a potentially important material for applications in separation membranes and catalysis. Moreover, one of the proposed structures, $γ$-silagraphyne, is a direct-band-gap semiconductor with a bandgap of 0.89 eV, which has a strong absorption peak in the visible-light region, giving a promising application in ultra-thin transistors, optical sensor devices and solar cell devices.

0 citations0 reviewsNo code linkedOpen access