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Xiaohui Deng

Xiaohui Deng contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Evolution of channel flow and Darcy law beyond the critical Reynolds number

Channel flow is usually described by Darcy law with the Poiseuille flow profile. However, for incompressible channel flow there is a critical state, characterized by a critical Reynolds number $Re_c$ and a critical wavevector mc, beyond which the channel flow becomes unstable in the linear regime. By obtaining the analytical eigenfunctions of the linearized, incompressible, three dimensional (3D) Navier-Stokes (NS) equation in the channel geometry, i.e., the hydrodynamic modes (HMs), we reduce the full NS equation to a system of coupled autonomous ordinary differential equations (ODEs) by expanding the velocity in terms of the HMs; time becomes the only independent variable. The nonlinear term of the NS equation is converted to a third-rank tensor that couples pairs of the expansion coefficients to effect the time variation on the third. In the linear regime, the value of $Re_c$ is obtained to five significant digit accuracy when compared to the Orszag result. We numerically time evolve the autonomous ODEs at $Re>Re_c$ with a finite set of thermally excited initial HMs to find a fluctuating equilibrium state with a reduced net flow rate, accompanied by vortices. Through the perspective of force balance, interesting features are uncovered in the counter-flow profiles at $Re>Re_c$.

preprint2022arXiv

Multiferroic van der Waals heterostructure FeCl$_2$/Sc$_2$CO$_2$: Nonvolatile electrically switchable electronic and spintronic properties

Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructure composed of ferromagnetic FeCl$_2$ monolayer and ferroelectric Sc$_2$CO$_2$ monolayer using first-principles density functional theory and quantum transport simulations. We show that FeCl$_2$/Sc$_2$CO$_2$ heterostructure can be reversibly switched from semiconducting to half-metallic behavior by electrically modulating the ferroelectric polarization states of Sc$_2$CO$_2$. Intriguingly, the half-metallic phase exhibits a Type-III broken gap band alignment, which can be beneficial for tunnelling field-effect transistor application. We perform a quantum transport simulation, based on a \emph{proof-of-concept} two-terminal nanodevice, to demonstrate all-electric-controlled valving effects uniquely enabled by the nonvolatile ferroelectric switching of the heterostructure. These findings unravels the potential of FeCl$_2$/Sc$_2$CO$_2$ vdW heterostructures as a building block for designing a next generation of ultimately compact information processing, data storage and spintronics devices.

preprint2022arXiv

Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe

Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry and thus a thickness-independent character emerges. Here, we apply high-resolution angle-resolved photoemission spectroscopy to directly image the in-plane anisotropic energy bands in monoclinic gallium telluride (GaTe). Our first-principles calculations reveal the in-plane anisotropic energy band structure of GaTe measured experimentally is dominated by a strong bulk-surface interaction rather than geometric factors, surface effect and quantum confinement effect. Furthermore, accompanied by the thickness of GaTe increasing from mono- to few-layers, the strong interlayer coupling of GaTe induces direct-indirect-direct band gap transitions and the in-plane anisotropy of hole effective mass is reversed. Our results shed light on the physical origins of in-plane anisotropy of electronic structure in GaTe, paving the way for the design and device applications of nanoelectronics and optoelectronics based on anisotropic layered semiconductors.