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Xiaofang Chen

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2 published item(s)

preprint2024arXiv

Specific Emitter Identification Based on Joint Variational Mode Decomposition

Specific emitter identification (SEI) technology is significant in device administration scenarios, such as self-organized networking and spectrum management, owing to its high security. For nonlinear and non-stationary electromagnetic signals, SEI often employs variational modal decomposition (VMD) to decompose the signal in order to effectively characterize the distinct device fingerprint. However, the trade-off of VMD between the robustness to noise and the ability to preserve signal information has not been investigated in the current literature. Moreover, the existing VMD algorithm does not utilize the stability of the intrinsic distortion of emitters within a certain temporal span, consequently constraining its practical applicability in SEI. In this paper, we propose a joint variational modal decomposition (JVMD) algorithm, which is an improved version of VMD by simultaneously implementing modal decomposition on multi-frame signals. The consistency of multi-frame signals in terms of the central frequencies and the inherent modal functions (IMFs) is exploited, which effectively highlights the distinctive characteristics among emitters and reduces noise. Additionally, the complexity of JVMD is analyzed, which is proven to be more computational-friendly than VMD. Simulations of both modal decomposition and SEI that involve real-world datasets are presented to illustrate that when compared with VMD, the JVMD algorithm improves the accuracy of device classification and the robustness towards noise.

preprint2016arXiv

Valley splitting in the transition-metal dichalcogenides monolayer via atoms adsorption

In this letter we study the valley degeneracy splitting of the transition-metal dichalcogenides monolayer by first-principles calculations. The local magnetic moments are introduced into the system when the transition-metal atoms are adsorbed to the monolayer surface. Zeeman effect arising from the local magnetic moment at transition-metal atom sites lifts the valley degeneracy. Anomalous charge, spin and valley Hall Effects can be accessed due to valley splitting when we can only excite carriers of one valley. The valley splitting depends on the direction of magnetization and thus can be tuned continuously by an external magnetic field. This tunable valley splitting offers a practical avenue for exploring device paradigms based on the spin and valley degrees of freedom.