Source author record

Xiaodong Yan

Xiaodong Yan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

8works
6topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

8 published item(s)

preprint2022arXiv

Nonlinear approximation of 3D smectic liquid crystals: sharp lower bound and compactness

We consider the 3D smectic energy $$\mathcal{E}_{ε}\left( u\right) =\frac{1}{2}\int_{Ω}\frac{1}{\varepsilon } \left( u_z-\frac{( u_x)^{2}+( u_y)^{2}}{2}\right) ^{2}+\varepsilon \left( u_{xx}+u_{yy}\right)^{2}\,dx\,dy\,dz. $$ The model contains as a special case the well-known 2D Aviles-Giga model. We prove a sharp lower bound on $\mathcal{E}_{\varepsilon}$ as $\varepsilon \to 0$ by introducing 3D analogues of the Jin-Kohn entropies. The sharp bound corresponds to an equipartition of energy between the bending and compression strains and was previously demonstrated in the physics literature only when the approximate Gaussian curvature of each smectic layer vanishes. Also, for $\varepsilon_{n}\rightarrow 0$ and an energy-bounded sequence $\{u_n \}$ with $\|\nabla u_n\|_{L^{p}(Ω)},\,\|\nabla u_n\|_{L^2(\partial Ω)}\leq C$ for some $p>6$, we obtain compactness of $\nabla u_{n}$ in $L^{2}$ assuming that $Δ_{xy}u_{n}$ has constant sign for each $n$.

preprint2022arXiv

Well-posedness of a modified degenerate Cahn-Hilliard model for surface diffusion

We study the well-posedness of a modified degenerate Cahn-Hilliard type model for surface diffusion. With degenerate phase-dependent diffusion mobility and additional stabilizing function, this model is able to give the correct sharp interface limit. We introduce a notion of weak solutions for the nonlinear model. The existence result is obtained by approximations of the proposed model with nondegenerate mobilities. We also employ this method to prove existence of weak solutions to a related model where the chemical potential contains a nonlocal term originated from self-climb of dislocations in crystalline materials.

preprint2015arXiv

Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters, and for power electronics.

preprint2015arXiv

Polarization-induced Zener Tunnel Diodes in GaN/InGaN/GaN Heterojunctions

By the insertion of thin InGaN layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.

preprint2015arXiv

Uniqueness of one-dimensional Néel wall profiles

We study the domain wall structure in thin uniaxial ferromagnetic films in the presence of an in-plane applied external field in the direction normal to the easy axis. Using the reduced one-dimensional thin film micromagnetic model, we analyze the critical points of the obtained non-local variational problem. We prove that the minimizer of the one-dimensional energy functional in the form of the Néel wall is the unique (up to translations) critical point of the energy among all monotone profiles with the same limiting behavior at infinity. Thus, we establish uniqueness of the one-dimensional monotone Néel wall profile in the considered setting. We also obtain some uniform estimates for general one-dimensional domain wall profiles.

preprint2014arXiv

Random Multipliers Numerically Stabilize Gaussian and Block Gaussian Elimination: Proofs and an Extension to Low-rank Approximation

We prove that standard Gaussian random multipliers are expected to numerically stabilize both Gaussian elimination with no pivoting and block Gaussian elimination. Moreover we prove that such a multiplier (even without the customary oversampling) is expected to support low-rank approximation of a matrix. Our test results are in good accordance with this analysis. Empirically random circulant or Toeplitz multipliers are as efficient as Gaussian ones, but their formal support is more problematic.