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Xiaobao Li

Xiaobao Li appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2022arXiv

Revisiting the Persson theory of elastoplastic contact: A simpler closed-form solution and a rigorous proof of boundary conditions

Persson's theory of contact is extensively used in the study of the purely normal interaction between a nominally flat rough surface and a rigid flat. In the literature, Persson's theory was successfully applied to the elastoplastic contact problem with a scale-independent hardness $H$. However, it yields a closed-form solution, $P(p, ξ)$, in terms of an infinite sum of sines. In this study, $P(p, ξ)$ is found to have a simpler form which is a superposition of three Gaussian functions. A rigorous proof of the boundary condition $P(p=0, ξ)=P(p=H, ξ) = 0$ is given based on the new solution.

preprint2014arXiv

Mechanical Strain can Switch the Sign of Quantum Capacitance from Positive to Negative

Quantum capacitance is a fundamental quantity that can directly reveal many-body interactions among electrons and is expected to play a critical role in nanoelectronics. One of many tantalizing recent physical revelations about quantum capacitance is that it can posses a negative value, hence allowing for the possibility of enhancing the overall capacitance in some particular material systems beyond the scaling predicted by classical electrostatics. Using detailed quantum mechanical simulations, we find an intriguing result that mechanical strains can tune both signs and values of quantum capacitance. We use a small coaxially-gated carbon nanotube as a paradigmatical capacitor system and show that, for the range of mechanical strain considered, quantum capacitance can be adjusted from very large positive to very large negative values (in the order of plus/minus hundreds of attofarads), compared to the corresponding classical geometric value (0.31035 aF). We elucidate the mechanisms underpinning the switching of the sign of quantum capacitance due to strain. This finding opens novel avenues in designing quantum capacitance for applications in nanosensors, energy storage, and nanoelectronics.