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Xiang-Rong Chen

Xiang-Rong Chen contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

How chemical functionalization affects the lattice thermal conductivities of antimony films?

Chemical functionalization is an effective means to tune electronic and crystal structure of two-dimensional material, which may be crucial for moder microelectronics industry. Based on the first-principle calculation and an iterative solution of Boltzmann transport equation, we find that antimony films are potential excellent thermoelectrical materials with rather low thermal conductivities $k$ ($<$ 2.5 W/mK). The chemical functionalization can induce the reduction in $k$ to some extent, which is mainly due to the reduction of phonon lifetimes limited by the anharmonic scattering. More interesting, the origin of the reduction in $k$ is not the anharmonic interaction but the harmonic interaction from the depressed phonon spectrum mechanism, and for some chemical functional atom in halogen, the flat modes appearing in the low frequency range play also a key factor in the reduction of $k$ by significantly increasing the three-phonon scattering channels. Our work analyzes the reduction mechanism in $k$ from the chemical functionalization for antimonene, and provides a new view to adjust the thermal conductivity which can benefit thermoelectric material design.

preprint2015arXiv

Controlling quantum spin Hall state via strain in various stacking bilayer phosphorene

Quantum spin Hall (QSH) state of matter has a charge excitation bulk bandgap and a pair of gapless spin-filtered edge-states, which can support backscattering-free transport. Bilayer phosphorene possesses a large tunable bandgap and high carrier mobilities, and therefore has the widely potential applications in nanoelectronics and optics. Here, we demonstrate an strain-induced electronic topological phase transition from a normal to QSH state in bilayer phosphorene accompanying by a band inversion that changes $\mathbbm{Z}_{2}$ from 0 to 1, which is highly dependent on the interlayer stacking. When the bottom layer is shifted by 1/2 unit cell along axial direction with respect to the top layer, the topological bandgap reaches up to 92.5 meV, which is sufficiently large to realize the QSH effect at room temperature. Its optical absorption spectrum becomes broadened, and even extends to the far-infra-red region leading to a wider range of brightness, which is highly desirable in optic devices.

preprint2015arXiv

Strain-induced large band-gap topological insulator in a new stable silicon allotrope: dumbbell silicene

By the generalized gradient approximation in framewok of density functional theory, we investigate a 2D topological insulator of new silicon allotrope (call dumbbell silicene synthesized recently by Cahangirov et al) through tuning external compression strain, and find a topological quantum phase transition from normal to topological insulator, i.e., the dumbbell silicene can turn a two-dimensional topological insulator with an inverted band gap. The obtained maximum topological nontrivial band gap about 12 meV under isotropic strain is much larger than that for previous silicene, and can be further improved to 36 meV by tuning anisotropic strain, which is sufficiently large to realize quantum spin Hall effect even at room-temperature, and thus is beneficial to the fabrication of high-speed spintronics devices. Furthermore, we confirm that the boron nitride sheet is an ideal substrate for the experimental realization of the dumbbell silicene under external strain, maintaining its nontrivial topology. These properties make the two-dimensional dumbbell silicene a good platform to study novel quantum states of matter, showing great potential for future applications in modern silicon-based microelectronics industry.