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Xian Hu

Xian Hu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2015arXiv

Probing InAs quantum dot states with surface plasmon polaritons

When placed near a thin metallic film, excitons in a quantum dot (QD) decay into surface plasmon polaritons (SPPs), guided modes of light confined at the interface of the metal/dielectric. It was reported that the interaction of SPPs with excitons in a QD may give rise to a modification in the photoluminescence (PL) spectra of the exciton energy levels, however the mechanism that explains this modification remains unclear. We propose a new methodology to excite many energy levels in an exciton by placing the QDs near a metallic array of slits fabricated onto a thin metallic gold (Au) film. By changing the position under the array where the QDs are excited we can resolve between the many energy levels. The unique features of the PL spectra obtained are the result of the strong electromagnetic field (EMF), the increase in the local density of states (LDOS) and the mesoscopic effects attributed to the gradient of the SPP field near the QDs.

preprint2013arXiv

Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction

High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.