Source author record

Xi Cao

Xi Cao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

quant-ph cond-mat.mes-hall cond-mat.mtrl-sci

Catalog footprint

What is connected

5works

3topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2022arXiv

Experimental Quantum End-to-End Learning on a Superconducting Processor

Machine learning can be substantially powered by a quantum computer owing to its huge Hilbert space and inherent quantum parallelism. In the pursuit of quantum advantages for machine learning with noisy intermediate-scale quantum devices, it was proposed that the learning model can be designed in an end-to-end fashion, i.e., the quantum ansatz is parameterized by directly manipulable control pulses without circuit design and compilation. Such gate-free models are hardware friendly and can fully exploit limited quantum resources. Here, we report the first experimental realization of quantum end-to-end machine learning on a superconducting processor. The trained model can achieve 98% recognition accuracy for two handwritten digits (via two qubits) and 89% for four digits (via three qubits) in the MNIST (Mixed National Institute of Standards and Technology) database. The experimental results exhibit the great potential of quantum end-to-end learning for resolving complex real-world tasks when more qubits are available.

preprint2020arXiv

End-to-End Quantum Machine Learning Implemented with Controlled Quantum Dynamics

Toward quantum machine learning deployed on imperfect near-term intermediate-scale quantum (NISQ) processors, the entire physical implementation of should include as less as possible hand-designed modules with only a few ad-hoc parameters to be determined. This work presents such a hardware-friendly end-to-end quantum machine learning scheme that can be implemented with imperfect near-term intermediate-scale quantum (NISQ) processors. The proposal transforms the machine learning task to the optimization of controlled quantum dynamics, in which the learning model is parameterized by experimentally tunable control variables. Our design also enables automated feature selection by encoding the raw input to quantum states through agent control variables. Comparing with the gate-based parameterized quantum circuits, the proposed end-to-end quantum learning model is easy to implement as there are only few ad-hoc parameters to be determined. Numerical simulations on the benchmarking MNIST dataset demonstrate that the model can achieve high performance using only 3-5 qubits without downsizing the dataset, which shows great potential for accomplishing large-scale real-world learning tasks on NISQ processors.arning models. The scheme is promising for efficiently performing large-scale real-world learning tasks using intermediate-scale quantum processors.

preprint2020arXiv

Identification of Time-varying in situ Signals in Quantum Circuits

The identification of time-varying \textit{in situ} signals is crucial for characterizing the dynamics of quantum processes occurring in highly isolated environments. Under certain circumstances, they can be identified from time-resolved measurements via Ramsey interferometry experiments, but only with very special probe systems can the signals be explicitly read out, and a theoretical analysis is lacking on whether the measurement data are sufficient for unambiguous identification. In this paper, we formulate this problem as the invertibility of the underlying quantum input-output system, and derive the algebraic identifiability criterion and the algorithm for numerically identifying the signals. The criterion and algorithm can be applied to both closed and open quantum systems, and their effectiveness is demonstrated by numerical examples.

preprint2017arXiv

Accurate and efficient band gap predictions of metal halide perovskites using the DFT-1/2 method: GW accuracy with DFT expense

The outstanding optoelectronics and photovoltaic properties of metal halide perovskites, including high carrier motilities, low carrier recombination rates, and the tunable spectral absorption range are attributed to the unique electronic properties of these materials. While DFT provides reliable structures and stabilities of perovskites, it performs poorly in electronic structure prediction. The relativistic GW approximation has been demonstrated to be able to capture electronic structure accurately, but at an extremely high computational cost. Here we report efficient and accurate band gap calculations of halide metal perovskites by using the approximate quasiparticle DFT-1/2 method. Using AMX3 (A = CH3NH3, CH2NHCH2, Cs; M = Pb, Sn, X=I, Br, Cl) as demonstration, the influence of the crystal structure (cubic, tetragonal or orthorhombic), variation of ions (different A, M and X) and relativistic effects on the electronic structure are systematically studied and compared with experimental results. Our results show that the DFT-1/2 method yields accurate band gaps with the precision of the GW method with no more computational cost than standard DFT. This opens the possibility of accurate electronic structure prediction of sophisticated halide perovskite structures and new materials design for lead-free materials.

preprint2014arXiv

Simulation of Schottky-Barrier Phosphorene Transistors

Schottky barrier field-effect transistors (SBFETs) based on few and mono layer phosphorene are simulated by the non-equilibrium Green's function formalism. It is shown that scaling down the gate oxide thickness results in pronounced ambipolar I-V characteristics and significant increase of the minimal leakage current. The problem of leakage is especially severe when the gate insulator is thin and the number of layer is large, but can be effectively suppressed by reducing phosphorene to mono or bilayer. Different from two-dimensional graphene and layered dichalcogenide materials, both the ON-current of the phosphorene SBFETs and the metal-semiconductor contact resistance between metal and phosphorene strongly depend on the transport crystalline direction.