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Xavier Cartoixa

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2014arXiv

PtSi Clustering In Silicon Probed by Transport Spectroscopy

Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is reduced below a few tens of nanometers. Here we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states.

preprint2012arXiv

Correlation-mediated processes for electron-induced switching between Neel states of Fe anti-ferromagnetic chains

The controlled switching between two quasi-stable Neel states in adsorbed anti-ferromagnetic Fe chains has recently been achieved by Loth et al [Science 335, 196 (2012)]. In order to rationalize their data, we evaluate the rate of tunneling electron-induced switching between the Néel states. Good agreement is found with the experiment permitting us to identify three switching mechanisms: (i) low-bias direct electron-induced transitions, (ii) intermediate-bias switching via spin-wave-like excitation, and (iii) high-bias transitions mediated by domain wall formation. Spin correlations in the anti-ferromagnetic chains are the switching driving force leading to a marked chain-size dependence.

preprint2008arXiv

Theory of defects in one-dimensional systems: the case of Al in Si nanowires

The energetic cost of creating a defect within a host material is given by the formation energy. Here we present a formulation allowing the calculation of formation energies in one-dimensional nanostructures, which overcomes the difficulties involved in defining the chemical potential of the constituent species and the possible passivation of the surface. We also develop a formula for the Madelung correction for general dielectric tensors and computational cell shapes. We apply this formalism to the formation energies of charged Al impurities in silicon nanowires, obtaining concentrations significantly larger than in their bulk counterparts.