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Wolf Gero Schmidt

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cond-mat.mtrl-sci cond-mat.mes-hall quant-ph

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preprint2020arXiv

Spin decontamination for magnetic dipolar coupling calculations: Application to high-spin molecules and solid-state spin qubits

An accurate description of the two-electron density, crucial for magnetic coupling in spin systems, provides in general a major challenge for density functional theory calculations. It affects, e.g., the calculated zero-field splitting (ZFS) energies of spin qubits in semiconductors that frequently deviate significantly from experiment. In the present work (i) we propose an efficient and robust strategy to correct for spin contamination in both extended periodic and finite-size systems, (ii) verify its accuracy using model high-spin molecules, and finally (iii) apply the methodology to calculate accurate ZFS of spin qubits (NV$^-$ centers, divacancies) in diamond and silicon carbide. The approach is shown to reduce the dependence on the used exchange-correlation functional to a minimum.

preprint2020arXiv

Tetracene ultrathin film growth on silicon

Inorganic-organic interfaces are important for enhancing the power conversion efficiency of silicon-based solar cells through singlet exciton fission (SF). We elucidated the structure of the first monolayers of tetracene (Tc), a SF molecule, on hydrogen-passivated Si(111) [H-Si(111)] and hydrogenated amorphous Si (a-Si:H) by combining near-edge X-ray absorption fine structure (NEXAFS) and X-ray photoelectron spectroscopy (XPS) experiments with density functional theory (DFT) calculations. For samples grown at or below substrate temperatures of 265 K, the resulting ultrathin Tc films are dominated by almost upright-standing molecules. The molecular arrangement is very similar to the Tc bulk phase, with only slightly higher average angle between the conjugated molecular plane normal and the surface normal ($α$) around 77°. Judging from carbon K-edge X-ray absorption spectra, the orientation of the Tc molecules are almost identical when grown on H-Si(111) and a-Si:H substrates as well as for (sub)mono- to several-monolayer coverages. Annealing to room temperature, however, changes the film structure towards a smaller $α$ of about 63°. A detailed DFT-assisted analysis suggests that this structural transition is correlated with a lower packing density and requires a well-chosen amount of thermal energy. Therefore, we attribute the resulting structure to a distinct monolayer configuration that features less inclined, but still well-ordered molecules. The larger overlap with the substrate wavefunctions makes this arrangement attractive for an optimized interfacial electron transfer in SF-assisted silicon solar cells.

preprint2016arXiv

Grand canonical Peierls transition in In/Si(111)

Starting from a Su-Schrieffer-Heeger-like model inferred from first-principles simulations, we show that the metal-insulator transition in In/Si(111) is a first-order grand canonical Peierls transition in which the substrate acts as an electron reservoir for the wires. This model explains naturally the existence of a metastable metallic phase over a wide temperature range below the critical temperature and the sensitivity of the transition to doping. Raman scattering experiments corroborate the softening of the two Peierls deformation modes close to the transition.

preprint2015arXiv

Mechanism for nuclear and electron spin excitation by radio frequency current

Recent radio frequency scanning tunneling spectroscopy (rf-STS) experiments have demonstrated nuclear and electron spin excitations up to $\pm12\hbar$ in a single molecular spin quantum dot (qudot). Despite the profound experimental evidence, the observed independence of the well-established dipole selection rules is not described by existing theory of magnetic resonance -- pointing to a new excitation mechanism. Here we solve the puzzle of the underlying mechanism by presenting all relevant mechanistic steps. At the heart of the mechanism, periodic transient charging and electric polarization due to the rf-modulated tunneling process cause a periodic asymmetric deformation of the qudot, enabling spin transitions via spin-phonon-like coupling. The mechanism has general relevance for a broad variety of different spin qudots exhibiting internal mechanical degrees of freedom (organic molecules, doped semiconductor qudots, nanocrystals, etc.).