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Wenqing Liu

Wenqing Liu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2020arXiv

Defending Adversarial Examples via DNN Bottleneck Reinforcement

This paper presents a DNN bottleneck reinforcement scheme to alleviate the vulnerability of Deep Neural Networks (DNN) against adversarial attacks. Typical DNN classifiers encode the input image into a compressed latent representation more suitable for inference. This information bottleneck makes a trade-off between the image-specific structure and class-specific information in an image. By reinforcing the former while maintaining the latter, any redundant information, be it adversarial or not, should be removed from the latent representation. Hence, this paper proposes to jointly train an auto-encoder (AE) sharing the same encoding weights with the visual classifier. In order to reinforce the information bottleneck, we introduce the multi-scale low-pass objective and multi-scale high-frequency communication for better frequency steering in the network. Unlike existing approaches, our scheme is the first reforming defense per se which keeps the classifier structure untouched without appending any pre-processing head and is trained with clean images only. Extensive experiments on MNIST, CIFAR-10 and ImageNet demonstrate the strong defense of our method against various adversarial attacks.

preprint2015arXiv

Enhancing Magnetic Ordering in Cr-doped Bi2Se3 using High-TC Ferrimagnetic Insulator

We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi2-xCrxSe3, via the proximity effect using a high-TC ferrimagnetic insulator Y3Fe5O12. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 K to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.