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Wenlong Yu

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Published work

6 published item(s)

preprint2026arXiv

Fine-Grained Generalization via Structuralizing Concept and Feature Space into Commonality, Specificity and Confounding

Fine-Grained Domain Generalization (FGDG) presents greater challenges than conventional domain generalization due to the subtle inter-class differences and relatively pronounced intra-class variations inherent in fine-grained recognition tasks. Under domain shifts, the model becomes overly sensitive to fine-grained cues, leading to the suppression of critical features and a significant drop in performance. Cognitive studies suggest that humans classify objects by leveraging both common and specific attributes, enabling accurate differentiation between fine-grained categories. However, current deep learning models have yet to incorporate this mechanism effectively. Inspired by this mechanism, we propose Concept-Feature Structuralized Generalization (CFSG). This model explicitly disentangles both the concept and feature spaces into three structured components: common, specific, and confounding segments. To mitigate the adverse effects of varying degrees of distribution shift, we introduce an adaptive mechanism that dynamically adjusts the proportions of common, specific, and confounding components. In the final prediction, explicit weights are assigned to each pair of components. Extensive experiments on three single-source benchmark datasets demonstrate that CFSG achieves an average performance improvement of 9.87% over baseline models and outperforms existing state-of-the-art methods by an average of 3.08%. Additionally, explainability analysis validates that CFSG effectively integrates multi-granularity structured knowledge and confirms that feature structuralization facilitates the emergence of concept structuralization.

preprint2022arXiv

Titanium Nitride Film on Sapphire Substrate with Low Dielectric Loss for Superconducting Qubits

Dielectric loss is one of the major decoherence sources of superconducting qubits. Contemporary high-coherence superconducting qubits are formed by material systems mostly consisting of superconducting films on substrate with low dielectric loss, where the loss mainly originates from the surfaces and interfaces. Among the multiple candidates for material systems, a combination of titanium nitride (TiN) film and sapphire substrate has good potential because of its chemical stability against oxidization, and high quality at interfaces. In this work, we report a TiN film deposited onto sapphire substrate achieving low dielectric loss at the material interface. Through the systematic characterizations of a series of transmon qubits fabricated with identical batches of TiN base layers, but different geometries of qubit shunting capacitors with various participation ratios of the material interface, we quantitatively extract the loss tangent value at the substrate-metal interface smaller than $8.9 \times 10^{-4}$ in 1-nm disordered layer. By optimizing the interface participation ratio of the transmon qubit, we reproducibly achieve qubit lifetimes of up to 300 $μ$s and quality factors approaching 8 million. We demonstrate that TiN film on sapphire substrate is an ideal material system for high-coherence superconducting qubits. Our analyses further suggest that the interface dielectric loss around the Josephson junction part of the circuit could be the dominant limitation of lifetimes for state-of-the-art transmon qubits.

preprint2021arXiv

Fluxonium: an alternative qubit platform for high-fidelity operations

Superconducting qubits provide a promising path toward building large-scale quantum computers. The simple and robust transmon qubit has been the leading platform, achieving multiple milestones. However, fault-tolerant quantum computing calls for qubit operations at error rates significantly lower than those exhibited in the state of the art. Consequently, alternative superconducting qubits with better error protection have attracted increasing interest. Among them, fluxonium is a particularly promising candidate, featuring large anharmonicity and long coherence times. Here, we engineer a fluxonium-based quantum processor that integrates high qubit-coherence, fast frequency-tunability, and individual-qubit addressability for reset, readout, and gates. With simple and fast gate schemes, we achieve an average single-qubit gate fidelity of 99.97% and a two-qubit gate fidelity of up to 99.72%. This performance is comparable to the highest values reported in the literature of superconducting circuits. Thus our work, for the first time within the realm of superconducting qubits, reveals an approach toward fault-tolerant quantum computing that is alternative and competitive to the transmon system.

preprint2014arXiv

Giant supercurrent states in a superconductor-InAs/GaSb-superconductor junction

Superconductivity in topological materials has attracted a great deal of interest in both electron physics and material sciences since the theoretical predictions that Majorana fermions can be realized in topological superconductors [1-4]. Topological superconductivity could be realized in a type II, band-inverted, InAs/GaSb quantum well if it is in proximity to a conventional superconductor. Here we report observations of the proximity effect induced giant supercurrent states in an InAs/GaSb bilayer system that is sandwiched between two superconducting tantalum electrodes to form a superconductor-InAs/GaSb-superconductor junction. Electron transport results show that the supercurrent states can be preserved in a surprisingly large temperature-magnetic field (T-H) parameter space. In addition, the evolution of differential resistance in T and H reveals an interesting superconducting gap structure.

preprint2014arXiv

Superconducting proximity effect in inverted InAs/GaSb quantum well structures with Ta electrodes

We present our recent electronic transport results in top-gated InAs/GaSb quantum well hybrid structures with superconducting Ta electrodes. We show that the transport across the InAs-Ta junction depends largely on the interfacial transparency, exhibiting distinct zero-bias behavior. For a relatively resistive interface a broad conductance peak is observed at zero bias. When a transparent InAs-Ta interface is achieved, a zero-bias conductance dip appears with two coherent-peak-like features forming at bias voltages corresponding to the superconducting gap of Ta. The conductance spectra of the transparent InAs-Ta junction at different gate voltages can be fit well using the standard Blonder-Tinkham-Klapwijk theory.

preprint2013arXiv

Probing terahertz surface plasmon waves in graphene structures

Epitaxial graphene mesas and ribbons are investigated using terahertz (THz) nearfield microscopy to probe surface plasmon excitation and THz transmission properties on the sub-wavelength scale. The THz near-field images show variation of graphene properties on a scale smaller than the wavelength, and excitation of THz surface waves occurring at graphene edges, similar to that observed at metallic edges. The Fresnel reflection at the substrate SiC/air interface is also found to be altered by the presence of graphene ribbon arrays, leading to either reduced or enhanced transmission of the THz wave depending on the wave polarization and the ribbon width.