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Wenlong Bai

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2 published item(s)

preprint2017arXiv

A Compact, Wide Field-of-View Gradient-index Lens Antenna for Millimeter-wave MIMO on Mobile Devices

Lens-based beam-forming antennas offer a low-power, low-cost alternative to hybrid beamforming antenna arrays. They are ideally suited to millimeter-wave massive MIMO systems due to their native beam-space operation and angular selectivity and minimal dependence of high-speed data converters. We discuss the design of a compact and low-cost lens-based beam-forming antenna for small form-factor platforms such as small-cells and mobile devices in 5G wireless networks. We discuss a gradient-index design method and low-cost fabrication method based on perforated dielectrics. We discuss the need for high-contrast permittivity ranges to achieve wide scan angles which are essential for leveraging the full capability of massive MIMO systems (e.g., full stream capacity). Finally, we show that by using an appropriately designed perforated medium, gradient-index lenses with low minimum permittivity of 1.25 can achieve a maximum beam-steering angle of 44 degrees. We suggest that such an approach can enable practical low-loss, low-cost, and compact beam-steering lens antennas for millimeter-wave MIMO with wide beam-steering angles.

preprint2017arXiv

Silicon Micromachined High-contrast Artificial Dielectrics for Millimeter-wave Transformation Optics Antennas

Transformation optics methods and gradient index electromagnetic structures rely upon spatially varied arbitrary permittivity. This, along with recent interest in millimeter-wave lens-based antennas demands high spatial resolution dielectric variation. Perforated media have been used to fabricate gradient index structures from microwaves to THz but are often limited in contrast. We show that by employing regular polygon unit-cells (hexagon, square, and triangle) on matched lattices we can realize very high contrast permittivity ranging from 0.1-1.0 of the background permittivity. Silicon micromachining (Bosch process) is performed on high resistivity Silicon wafers to achieve a minimum permittivity of 1.25 (10% of Silicon) in the WR28 waveguide band, specifically targeting the proposed 39 GHz 5G communications band. The method is valid into the THz band.