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WenHui Xie

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record
cond-mat.mtrl-sci

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3 publications

preprint2018arXiv

Type-I and type-II Nodal Lines Coexistence in the Antiferromagnetic monolayer CrAs2_{2}

Topological nodal line semimetals, hosting one-dimensional Fermi lines with symmetry protection, has become a hot topic in topological quantum matter. Due to the breaking of time reversal symmetry in magnetic system, nodal lines require protection by additional symmetries. Here, we report the discovery of antiferromagnetic type-I and type-II nodal lines coexist in the monolayer CrAs2_{2} based on a systematic first-principles calculation. Remarkably, the type-I nodal line in CrAs2_{2} form a concentric loop centered around the ΓΓ point is filling-enforced by nonsymmorphic analogue symmetry and robust against spin-orbital coupling. The type-II nodal lines, a kind of open nodal lines appear around the Fermi level, are protected by the mirror symmetry in the absence of spin-orbital coupling. The antiferromagnetic monolayer CrAs2_{2} proposed here may provide a platform for the correlation between magnetism and exotic topological phases.

Open access
preprint2012arXiv

Crystal structure and electronic structure of quaternary semiconductors Cu2_2ZnTiSe4_4 and Cu2_2ZnTiS4_4 for solar cell absorber

We design two new I2-II-IV-VI4 quaternary semiconductors Cu2_2ZnTiSe4_4 and Cu2_2ZnTiS4_4, and systematically study the crystal and electronic structure by employing first-principles electronic structure calculations. Among the considered crystal structures, it is confirmed that the band gaps of Cu2_2ZnTiSe4_4 and Cu2_2ZnTiS4_4 originate from the full occupied Cu 3dd valence band and unoccupied Ti 3dd conducting band, and kesterite structure should be the ground state. Furthermore, our calculations indicate that Cu2_2ZnTiSe4_4 and Cu2_2ZnTiS4_4 have comparable band gaps with Cu2_2ZnTSe4_4 and Cu2_2ZnTS4_4, but almost twice larger absorption coefficient α(ω)α(ω). Thus, the materials are expected to be candidate materials for solar cell absorber.

Open access
preprint2012arXiv

Tight-binding parametrization for the chromium nitride: A NMTO study

We investigate the band structure of chromium nitride using the NNth-order muffin-tin orbitals (NMTO) based downfolding technique. We obtain downfolded Cr dd bands including both ege_{g} and t2gt_{2g} states and the hopping integrals of the tight-binding Cr dd bands for both cubic and orthorhombic lattice. We further analyze the chemical bonding and tight-binding parameters from the NMTO produced tight-binding Hamiltonian. The effect of lattice distortion is also discussed according to the downfolded tight-binding parameters.

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