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WenHui Xie

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Published work

3 published item(s)

preprint2018arXiv

Type-I and type-II Nodal Lines Coexistence in the Antiferromagnetic monolayer CrAs$_{2}$

Topological nodal line semimetals, hosting one-dimensional Fermi lines with symmetry protection, has become a hot topic in topological quantum matter. Due to the breaking of time reversal symmetry in magnetic system, nodal lines require protection by additional symmetries. Here, we report the discovery of antiferromagnetic type-I and type-II nodal lines coexist in the monolayer CrAs$_{2}$ based on a systematic first-principles calculation. Remarkably, the type-I nodal line in CrAs$_{2}$ form a concentric loop centered around the $Γ$ point is filling-enforced by nonsymmorphic analogue symmetry and robust against spin-orbital coupling. The type-II nodal lines, a kind of open nodal lines appear around the Fermi level, are protected by the mirror symmetry in the absence of spin-orbital coupling. The antiferromagnetic monolayer CrAs$_{2}$ proposed here may provide a platform for the correlation between magnetism and exotic topological phases.

preprint2012arXiv

Crystal structure and electronic structure of quaternary semiconductors Cu$_2$ZnTiSe$_4$ and Cu$_2$ZnTiS$_4$ for solar cell absorber

We design two new I2-II-IV-VI4 quaternary semiconductors Cu$_2$ZnTiSe$_4$ and Cu$_2$ZnTiS$_4$, and systematically study the crystal and electronic structure by employing first-principles electronic structure calculations. Among the considered crystal structures, it is confirmed that the band gaps of Cu$_2$ZnTiSe$_4$ and Cu$_2$ZnTiS$_4$ originate from the full occupied Cu 3$d$ valence band and unoccupied Ti 3$d$ conducting band, and kesterite structure should be the ground state. Furthermore, our calculations indicate that Cu$_2$ZnTiSe$_4$ and Cu$_2$ZnTiS$_4$ have comparable band gaps with Cu$_2$ZnTSe$_4$ and Cu$_2$ZnTS$_4$, but almost twice larger absorption coefficient $α(ω)$. Thus, the materials are expected to be candidate materials for solar cell absorber.

preprint2012arXiv

Tight-binding parametrization for the chromium nitride: A NMTO study

We investigate the band structure of chromium nitride using the $N$th-order muffin-tin orbitals (NMTO) based downfolding technique. We obtain downfolded Cr $d$ bands including both $e_{g}$ and $t_{2g}$ states and the hopping integrals of the tight-binding Cr $d$ bands for both cubic and orthorhombic lattice. We further analyze the chemical bonding and tight-binding parameters from the NMTO produced tight-binding Hamiltonian. The effect of lattice distortion is also discussed according to the downfolded tight-binding parameters.