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Weixiang Zhang

Weixiang Zhang contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

MesonGS++: Post-training Compression of 3D Gaussian Splatting with Hyperparameter Searching

3D Gaussian Splatting (3DGS) achieves high-quality novel view synthesis with real-time rendering, but its storage cost remains prohibitive for practical deployment. Existing post-training compression methods still rely on many coupled hyperparameters across pruning, transformation, quantization, and entropy coding, making it difficult to control the final compressed size and fully exploit the rate-distortion trade-off. We propose MesonGS++, a size-aware post-training codec for 3D Gaussian compression. On the codec side, MesonGS++ combines joint importance-based pruning, octree geometry coding, attribute transformation, selective vector quantization for higher-degree spherical harmonics, and group-wise mixed-precision quantization with entropy coding. On the configuration side, it treats the reserve ratio and bit-width allocation as the dominant rate-distortion knobs and jointly optimizes them under a target storage budget via discrete sampling and 0--1 integer linear programming. We further propose a linear size estimator and a CUDA parallel quantization operator to accelerate the hyperparameter searching process. Extensive experiments show that MesonGS++ achieves over 34$\times$ compression while preserving rendering fidelity, outperforming state-of-the-art post-training methods and accurately meeting target size budgets. Remarkably, without any training, MesonGS++ can even surpass the PSNR of vanilla 3DGS at a 20$\times$ compression rate on the Stump scene. Our code is available at https://github.com/mmlab-sigs/mesongs_plus

preprint2019arXiv

Impact of Electrostatic Doping Level on the Dissipative Transport in Graphene Nanoribbons Tunnel Field-Effect Transistors

The impact of electrostatic doping level on the dissipative transport of Armchair GNR-TFET is studied using the Quantum Perturbation Theory (QPT) with the Extended Lowest Order Expansion (XLOE) implementation method. Results show that the doping level of the source and drain sides of the GNR-TFET has a significant impact on the phonon contribution to the carrier transport process. Unlike in other similar studies, where phonons are believed to have a constant detrimental influence on the ION/IOFF ratio and Subthreshold Swing (SS) of the TFET devices due to the phonon absorption-assisted tunneling, we show that by a proper engineering of the doping level in the source and drain, the phonon absorption assisted tunneling can be effectively inhibited. We also show that as temperature increase, the device switching property deteriorates in both the ballistic and dissipative transport regimes, and there exists a temperature-dependent critical doping level where the device has optimal switching behavior.