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Wei-Bing Zhang

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cond-mat.mtrl-sci physics.comp-ph

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preprint2022arXiv

Large Intrinsic Valley Polarization and High Curie Temperature in Stable Two-dimensional Ferrovalley YX$_2$(X=I,Br and Cl)

Ferrovalley materials with spontaneous valley polarization are crucial to valleytronic application. Based on first-principles calculations, we demonstrate that two-dimensional (2D) YX$_2$(X= I, Br,and Cl) in 2H structure constitute a series of promising ferrovalley semiconductors with large spontaneous valley polarization and high Curie temperature. Our calculations reveal that YX$_2$ are dynamically and thermally stable 2D ferromagnetic semiconductors with a Curie temperature above 200 K. Due to the natural noncentrosymmetric structure, intrinsic ferromagnetic order and strong spin orbital coupling, the large spontaneous valley polarizations of 108.98, 57.70 and 22.35 meV are also predicted in single-layer YX$_2$(X = I, Br and Cl),respectively. The anomalous valley Hall effect is also proposed based on the valley contrasting Berry curvature. Moreover, the ferromagnetism and valley polarization are found to be effectively tuning by applying a biaxial strain. Interestingly, the suppressed valley physics of YBr$_2$ and YCl$_2$ can be switched on via applying a moderate compression strain. The present findings promise YX$_2$ as competitive candidates for the further experimental studies and practical applications in valleytronics.

preprint2020arXiv

Spin-dependent Schottky barriers and vacancy-induced spin-selective Ohmic contacts in magnetic vdW heterostructures

The 2D ferromagnets, such as CrX3 (X=Cl, Br and I), have been attracting extensive attentions since they provide novel platforms to fundamental physics and device applications. Integrating CrX3 with other electrodes and substrates is an essential step to their device realization. Therefore, it is important to understand the interfacial properties between CrX3 and other 2D materials. As an illustrative example, we have investigated the heterostructures between CrX3 and graphene (CrX3/Gr) from firstprinciples. We find unique Schottky contacts type with strongly spin-dependent barriers in CrX3/Gr. This can be understood by synergistic effects between the exchange splitting of semiconductor band of CrX3 and interlayer charge transfer. The spinasymmetry of Schottky barriers may result in different tunneling rates of spin-up and down electrons, and then lead to spin-polarized current, namely spin-filter (SF) effect. Moreover, by introducing X vacancy into CrX3/Gr, an Ohmic contact forms in spin-up direction. It may enhance the transport of spin-up electrons, and improve SF effect. Our systematic study reveals the unique interfacial properties of CrX3/Gr, and provides a theoretical view to the understanding and designing of spintronics device based on magnetic vdW heterostructures.

preprint2016arXiv

Robust Intrinsic Ferromagnetism and Half Semiconductivity in Stable Two-Dimensional Single-Layer Chromium Trihalides

Two-dimensional (2D) intrinsic ferromagnetic (FM) semiconductors are crucial to develop low-dimensional spintronic devices. Using density functional theory, we show that single-layer chromium trihalides (SLCTs) (CrX$_3$,X=F, Cl, Br and I) constitute a series of stable 2D intrinsic FM semiconductors. A free-standing SLCT can be easily exfoliated from the bulk crystal, due to a low cleavage energy and a high in-plane stiffness. Electronic structure calculations using the HSE06 functional indicate that both bulk and single-layer CrX$_3$ are half semiconductors with indirect gaps and their valence bands and conduction bands are fully spin-polarized in the same spin direction. The energy gaps and absorption edges of CrBr$_3$ and CrI$_3$ are found to be in the visible frequency range, which implies possible opt-electronic applications. Furthermore, SLCTs are found to possess a large magnetic moment of 3$μ_B$ per formula unit and a sizable magnetic anisotropy energy. The magnetic exchange constants of SLCTs are then extracted using the Heisenberg spin Hamiltonian and the microscopic origins of the various exchange interactions are analyzed. A competition between a near 90$^\circ$ FM superexchange and a direct antiferromagnetic (AFM) exchange results in a FM nearest-neighbour exchange interaction. The next and third nearest-neighbour exchange interactions are found to be FM and AFM respectively and this can be understood by the angle-dependent extended Cr-X-X-Cr superexchange interaction. Moreover, the Curie temperatures of SLCTs are also predicted using Monte Carlo simulations and the values can further increase by applying a biaxial tensile strain. The unique combination of robust intrinsic ferromagnetism, half semiconductivity and large magnetic anisotropy energies renders the SLCTs as promising candidates for next-generation semiconductor spintronic applications.

preprint2015arXiv

The electronic structure and elastic property of monolayer and bilayer transition metal dichalcogenides MX$_2$ (M=Mo,W;X=O,S,Se,Te): A comparative first-principles study

First-principle calculations with different exchange-correlation functionals, including LDA, PBE and vdW-DF functional in form of optB88-vdW, have been performed to investigate the electronic and elastic properties of two dimensional transition metal dichalcogenides(TMDCs) with the formula of MX$_2$(M=Mo,W; X=O,S,Se,Te) in both monolayer and bilayer structures. The calculated band structures show a direct band gap for monolayer TMDCs at the K point except for MoO$_2$ and WO$_2$. When the monolayers are stacked into bilayer, the reduced indirect band gaps are found except for bilayer WTe$_2$, in which direct gap is still present at the K point. The calculated in-plane Young moduli are comparable to graphene, which promises the possible application of TMDCs in future flexible and stretchable electronic devices. We also evaluated the performance of different functionals including LDA, PBE, and optB88-vdW in describing elastic moduli of TMDCs and found that LDA seems to be the most qualified method. Moreover, our calculations suggest that the Young moduli for bilayers are insensitive to stacking orders and the mechanical coupling between monolayers seems to be negligible.