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Wei-Bing Zhang

Wei-Bing Zhang contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Large Intrinsic Valley Polarization and High Curie Temperature in Stable Two-dimensional Ferrovalley YX$_2$(X=I,Br and Cl)

Ferrovalley materials with spontaneous valley polarization are crucial to valleytronic application. Based on first-principles calculations, we demonstrate that two-dimensional (2D) YX$_2$(X= I, Br,and Cl) in 2H structure constitute a series of promising ferrovalley semiconductors with large spontaneous valley polarization and high Curie temperature. Our calculations reveal that YX$_2$ are dynamically and thermally stable 2D ferromagnetic semiconductors with a Curie temperature above 200 K. Due to the natural noncentrosymmetric structure, intrinsic ferromagnetic order and strong spin orbital coupling, the large spontaneous valley polarizations of 108.98, 57.70 and 22.35 meV are also predicted in single-layer YX$_2$(X = I, Br and Cl),respectively. The anomalous valley Hall effect is also proposed based on the valley contrasting Berry curvature. Moreover, the ferromagnetism and valley polarization are found to be effectively tuning by applying a biaxial strain. Interestingly, the suppressed valley physics of YBr$_2$ and YCl$_2$ can be switched on via applying a moderate compression strain. The present findings promise YX$_2$ as competitive candidates for the further experimental studies and practical applications in valleytronics.

preprint2020arXiv

Spin-dependent Schottky barriers and vacancy-induced spin-selective Ohmic contacts in magnetic vdW heterostructures

The 2D ferromagnets, such as CrX3 (X=Cl, Br and I), have been attracting extensive attentions since they provide novel platforms to fundamental physics and device applications. Integrating CrX3 with other electrodes and substrates is an essential step to their device realization. Therefore, it is important to understand the interfacial properties between CrX3 and other 2D materials. As an illustrative example, we have investigated the heterostructures between CrX3 and graphene (CrX3/Gr) from firstprinciples. We find unique Schottky contacts type with strongly spin-dependent barriers in CrX3/Gr. This can be understood by synergistic effects between the exchange splitting of semiconductor band of CrX3 and interlayer charge transfer. The spinasymmetry of Schottky barriers may result in different tunneling rates of spin-up and down electrons, and then lead to spin-polarized current, namely spin-filter (SF) effect. Moreover, by introducing X vacancy into CrX3/Gr, an Ohmic contact forms in spin-up direction. It may enhance the transport of spin-up electrons, and improve SF effect. Our systematic study reveals the unique interfacial properties of CrX3/Gr, and provides a theoretical view to the understanding and designing of spintronics device based on magnetic vdW heterostructures.