Researcher profile

Wanderla L. Scopel

Wanderla L. Scopel contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

H2 O incorporation in the phosphorene/a-SiO2 interface: A first-principles study

Based on first-principles calculations, we investigate the energetic stability and the electronic properties of (i) a single layer phosphorene (SLP) adsorbed on the amorphous sio2 surface (SLP/a-sio2), and (ii) the further incorporation of water molecules at the phosphorene/a-sio2 interface. In (i), we find that the phosphorene sheet bonds to a-sio2 through van der Waals interactions, even upon the presence of oxygen vacancy on the surface. The \slp/a-\sio\ system presents a type-I band alignment, with the valence (conduction) band maximum (minimum) of the phosphorene lying within the energy gap of the a-\sio\ substrate. The structural, and the surface-potential corrugations promote the formation of electron-rich and -poor regions on the phosphorene sheet and at the SLP/a-sio2 interface. Such charge density puddles have been strengthened by the presence of oxygen vacancies in a-sio2. In (ii), due to the amorphous structure of the surface, we have considered a number of plausible geometries of water embedded in the SLP/a-sio2 interface. There is an energetic preference to the formation of hydroxyl (OH) groups on the a-sio2 surface. Meanwhile, upon the presence of oxygenated water or interstitial oxygen in the phosphorene sheet, we find the formation of metastable OH bonded to the phosphorene, and the formation of energetically stable P--O--Si chemical bonds at the SLP/a-sio2 interface. Further x-ray absorption spectra (XAS) simulations have been done, aiming to provide additional structural/electronic informations of the oxygen atoms forming hydroxyl groups or P--O--Si chemical bonds at the interface region.

preprint2015arXiv

Interaction between single vacancies in graphene sheet: An ab initio calculation

In order to investigate the interaction between single vacancies in a graphene sheet, we have used spin-polarized density functional theory (DFT). Two distinct configurations were considered, either with the two vacancies located in the same sublattice or in different sublattices, and the effect of changing the separation between the vacancies was also studied. Our results show that the ground state of the system is indeed magnetic, but the presence of the vacancies in the same sublattice or in different sublattices and the possible topological configurations can lead to different contributions from the $π$ and $σ$ orbitals to magnetism. On the other hand, our findings reveal that the net magnetic moment of the system with the two vacancies in the same sublattice move towards the value of the magnetic moment per isolated vacancy with the increase of the distance between the vacancies, which is ascribed to the different contributions due to $π$ electrons. Moreover, it is also found that the local magnetic moments for vacancies in the same sublattice are in parallel configuration, while they have different orientations when the vacancies are created in different sublattices. So, our findings have clearly evidenced how difficult it would be to observe experimentally the emergence of magnetic order in graphene-based systems containing randomly created atomic vacancies, since the energy difference between cases of antiferromagnetic and ferromagnetic order decreases quickly with the increase in the distance separating each vacancy pair.

preprint2013arXiv

Lithium incorporation at the MoS2/graphene interface: an ab initio investigation

Based on ab initio calculations, we examine the incorporation of Li atoms in the MoS2/graphene interface. We find that the intercalated Li atoms are energetically more stable than Li atoms adsorbed on the MoS2 surface. The intercalated atoms interact with both graphene sheet and MoS2 layer, increasing the Li binding energies. However, the equilibrium geometries are ruled by the MoS2 layer, where the intercalated Li atoms lie on the top (Li_T) and hollow (Li_H) sites of the MoS2 layer. We calculate the Li diffusion barriers, along the Li_T -> Li_H diffusion path, where we find similar energy barriers compared with that obtained for Li adatoms on the MoS2 surface. Our results allow us to infer that the Li storage capacity increases at MoS2/G interfaces, in comparison with Li adatoms on the MoS2 surface, however, with no reduction on the mobility of the intercalated Li atoms. Those properties are interesting/useful to the development of Li batteries based on MoS2.