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W. Strupinski contributes to research discovery and scholarly infrastructure.
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Published work
Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers.
The energy-dependence of the electronic scattering time is probed by Landau level spectroscopy in quasi neutral multilayer epitaxial graphene. From the Landau levels broadening we find that the scattering rate increases linearly with energy. This implies a surprising property of the Landau level spectrum in graphene - the number of the resolved Landau levels remains constant with the applied magnetic field. Insights are given about possible scattering mechanism and carrier mobilities in the graphene system investigated.
We report a stoichiometric derivative of graphene with a fluorine atom attached to each carbon. Raman, optical, structural, micromechanical and transport studies show that the material is qualitatively different from the known graphene-based nonstoichiometric derivatives. Fluorographene is a high-quality insulator (resistivity >10^12 Ohm per square) with an optical gap of 3 eV. It inherits the mechanical strength of graphene, exhibiting Young's modulus of 100 N/m and sustaining strains of 15%. Fluorographene is inert and stable up to 400C even in air, similar to Teflon.
Cyclotron resonance in highly doped graphene has been explored using infrared magnetotransmission. Contrary to previous work, which only focused on the magneto-optical properties of graphene in the quantum regime, here we study the quasi-classical response of this system. We show that it has a character of classical cyclotron resonance, with an energy which is linear in the applied magnetic field and with an effective cyclotron mass defined by the position of the Fermi level m = E_F/v_F^2.