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W. Paul

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3 publications

preprint2015arXiv

Interplay between Orbital Magnetic Moment and Crystal Field Symmetry: Fe atoms on MgO

We combine density functional theory, x-ray magnetic circular dichroism, multiplet calculations, and scanning tunneling spectroscopy to assess the magnetic properties of Fe atoms adsorbed on a thin layer of MgO(100) on Ag(100). Despite the strong axial field due to the O ligand, the weak cubic field induced by the four-fold coordination to Mg atoms entirely quenches the first order orbital moment. This is in marked contrast to Co, which has an out-of-plane orbital moment of Lz=±3L_z = \pm 3 that is protected from mixing in a cubic ligand field. The spin-orbit interaction restores a large fraction of the Fe orbital moment leading a zero-field splitting of 14.0±0.314.0 \pm 0.3~meV, the largest value reported for surface adsorbed Fe atoms.

preprint2003arXiv

Studies of YBCO Strip Lines under Voltage Pulses: Optimisation of the Design of Fault Current Limiters

We present experimental results on the behaviour of a superconducting YBCO/Au meander of length L submitted to short circuit tests with constant voltage pulses. The meander, at the beginning of the short-circuit, is divided in two regions; one, with a length L1 proportional to the applied voltage, which first switches into a highly dissipative state (HDS) while the rest remains superconducting. Then the rest of the meander will progressively switch into the normal state due to the propagation of this HDS (few m/s) from both ends. The part L1 has to initially support a power density proportional to r.Jp^2 (r is the resistivity of the bilayer and Jp the peak current density). To avoid local excessive dissipation of power and over heating on one part of the wafer in the initial period, we have developed a novel design in order to distribute the dissipating section of the meander into many separated small dissipative zones. Furthermore the apparent propagation velocity of these dissipative zones is increased by the number of propagation fronts. We will show results obtained on 3kW (300V, 10A) FCL on a 2" wafer which confirm the benefits of this new design.

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