Researcher profile

W. J. Fan

W. J. Fan contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2015arXiv

Spin orbit coupling controlled spin pumping effect

Effective spin mixing conductance (ESMC) across the nonmagnetic metal (NM)/ferromagnet interface, spin Hall conductivity (SHC) and spin diffusion length (SDL) in the NM layer govern the functionality and performance of pure spin current devices with spin pumping technique. We show that all three parameters can be tuned significantly by the spin orbit coupling (SOC) strength of the NM layer in systems consisting of ferromagnetic insulating Y3Fe5O12 layer and metallic Pd1-xPtx layer. Surprisingly, the ESMC is observed to increase significantly with x changing from 0 to 1.0. The SHC in PdPt alloys, dominated by the intrinsic term, is enhanced notably with increasing x. Meanwhile, the SDL is found to decrease when Pd atoms are replaced by heavier Pt atoms, validating the SOC induced spin flip scattering model in polyvalent PdPt alloys. The capabilities of both spin current generation and spin charge conversion are largely heightened via the SOC. These findings highlight the multifold tuning effects of the SOC in developing the new generation of spintronic devices.

preprint2014arXiv

Atomistic calculation of the thickness and temperature dependence of exchange coupling through a dilute magnetic oxide

The exchange coupling of two magnetic layers via a diffuse oxide interlayer is studied with an atomistic spin model. We investigate the effect of magnetic concentration and oxide layer thickness on the effective exchange coupling strength and find an exponential dependence of the coupling strength on the oxide thickness without the need for magnetic pinholes. Furthermore we show that exchange coupling has a strong temperature dependence which is significant for the reversal dynamics during heat assisted magnetic recording.

preprint2014arXiv

Atomistic simulation of sub-nanosecond non-equilibrium field cooling processes for magnetic data storage applications

Thermally assisted magnetic writing is an important technology utilizing temperature dependent magnetic properties to enable orientation of a magnetic data storage medium. Using an atomistic spin model we study non-equilibrium field cooled magnetization processes on sub-nanosecond timescales required for device applications. We encapsulate the essential physics of the process in a TRM-T curve and show that for fast timescales heating to the Curie temperature is necessary where the magnetic relaxation time is shortest. Furthermore we demonstrate the requirement for large magnetic fields to achieve a high thermoremanent magnetization necessary for fast recording or data rates.

preprint2014arXiv

Galvanomagnetic effects and manipulation of antiferromagnetic interfacial uncompensated magnetic moment in exchange-biased bilayers

In this work, IrMn$_{3}$/insulating-Y$_{3}$Fe$_{5}$O$_{12}$ exchange-biased bilayers are studied. The behavior of the net magnetic moment $Δm_{AFM}$ in the antiferromagnet is directly probed by anomalous and planar Hall effects, and anisotropic magnetoresistance. The $Δm_{AFM}$ is proved to come from the interfacial uncompensated magnetic moment. We demonstrate that the exchange bias and rotational hysteresis are induced by the irreversible switching of the $Δm_{AFM}$. In the training effect, the $Δm_{AFM}$ changes continuously. This work highlights the fundamental role of the $Δm_{AFM}$ in the exchange bias and facilitates the manipulation of antiferromagnetic spintronic devices.