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W. H. Butler

W. H. Butler contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2012arXiv

Theoretical investigation into the possibility of very large moments in Fe16N2

We examine the mystery of the disputed high-magnetization α"-Fe16N2 phase, employing the Heyd-Scuseria-Ernzerhof screened hybrid functional method, perturbative many-body corrections through the GW approximation, and onsite Coulomb correlations through the GGA+U method. We present a first-principles computation of the effective on-site Coulomb interaction (Hubbard U) between localized 3d electrons employing the constrained random-phase approximation (cRPA), finding only somewhat stronger on-site correlations than in bcc Fe. We find that the hybrid functional method, the GW approximation, and the GGA+U method (using parameters computed from cRPA) yield an average spin moment of 2.9, 2.6 - 2.7, and 2.7 μ_B per Fe, respectively.

preprint2008arXiv

Half-Metallic L2$_1$ Structures with (001) Planar Insertions

A number of L2$_1$ phase alloys (composition X$_2$YZ) are half-metallic. Although this structure is typically described in terms of an fcc Bravais lattice with a 4 atom basis, it can be viewed more simply as a variant of bcc or B2 in which planes of X$_2$ alternate with planes of YZ along the 001 direction. Using ab-initio electronic structure calculations, we have investigated planar insertions along 001 into the L2$_1$ structure. For most scenarios, insertion of single or double atomic layers of Cr into Co$_2$MnGe or Co$_2$MnSi did not destroy the half-metallic property. One insertion of a Cr layer into Co$_2$MnGe was observed to increase the gap. In fact, we observed that for a large number of insertions using various transition metals or combinations of transition metals and non-transition metals, the band gap in the minority channel at the Fermi energy remains. An ad hoc rule that seems to partially capture the tendency to form half-metals can be formulated as: "001 planar insertions that can plausibly yield 8 down spin electrons on the X$_2$ layer and 4 down spin electrons on the YZ layer yield half-metals".

preprint2005arXiv

Spin Dependent Tunneling in FM|semiconductor|FM structures

Here we show that ordinary band structure codes can be used to understand the mechanisms of coherent spin-injection at interfaces between ferromagnets and semiconductors. This approach allows the screening of different material combinations for properties useful for obtaining high tunneling magnetoresistance (TMR). We used the Vienna Ab-initio Simulation Code (VASP) to calculate the wave function character of each band in periodic epitaxial Fe(100)|GaAs(100) and Fe(100)|ZnSe(100) structures. It is shown that Fe wave functions of different symmetry near Fermi energy decay differently in the GaAs and ZnSe.